Keyphrases
Resistive Switching Properties
19%
Neuromorphic
19%
Metal Work Function
19%
Synaptic Memristor
19%
Germanium Telluride
19%
Highly Doped Si
19%
Vapor Phase Etching
19%
Vacuum Annealing
19%
Few-layer MoS2
19%
Molybdenum Doping
19%
Reprinted from
19%
Vapor-liquid-solid Mechanism
19%
Memristive System
19%
Solar Cell Applications
19%
Ohmic Contact
19%
HfO2
19%
Ag Nanoclusters
19%
Au Nanoclusters
19%
GeTe
19%
Hafnium Oxide
19%
Memristor
19%
Deposition Methods
19%
Key Performance Parameters
19%
Application Performance
19%
Ga2O3
19%
β-Ga2O3 Thin Film
19%
Resistive Random Access Memory (ReRAM)
14%
Pre-Metallization
14%
Silicon Nanoclusters
14%
Si Devices
14%
Switching Mechanism
10%
Low Contact Resistance
9%
Atomic Spectroscopy
9%
Optical Scanning
9%
Sulfur Trioxide
9%
Molybdenum Oxide
9%
Layered Chalcogenides
9%
Atomic Force
9%
Oxide Islands
9%
Lateral Dimension
9%
(C) Oxidation
9%
Etch pit
9%
Inert Environment
9%
Film Genre
9%
Layer Oxide
9%
Tetrahedron
9%
Mechanical Exfoliation
9%
Memory Device
9%
Solar Cell Efficiency
8%
Ni-based
7%
Ion Etching
7%
GeTe Film
7%
Ar Ions
7%
Neuromorphic Computing
7%
Resistive Switching
7%
Resistive Switching Device
7%
Sn-based
6%
High Work Function
6%
As-deposited
6%
Mo-Ti
6%
Device Characteristics
5%
Material Science
Germanium
100%
Contact Resistance
88%
Phase Change Material
56%
Oxide Compound
40%
Switch
39%
Oxidation Reaction
29%
Thermal Stability
24%
Neuromorphic Computing
22%
Nanowire
21%
Silicon
19%
Surface Coating
19%
Chemical Vapor Deposition
19%
Oxygen Vacancy
19%
Physical Vapor Deposition
19%
Surface Treatment
19%
Density
19%
Film
19%
Optical Property
19%
Molybdenum
19%
Thin Films
19%
Nanoclusters
19%
Hafnium
19%
Transmission Electron Microscopy
17%
Annealing
16%
Amorphous Material
12%
X-Ray Photoelectron Spectroscopy
9%
Lithography
9%
Gas Flow
7%
Inert Gas
7%
Field Emission Scanning Electron Microscopy
6%
Water Vapor
6%
Morphology
5%
Engineering
Ohmic Contacts
39%
Si Device
19%
Nanoclusters
19%
Performance Parameter
19%
Resistive
19%
Optoelectronics
19%
State Reaction
13%
Ar Plasma
13%
Plasma Treatment
13%
Metallizations
9%
Random Access Memory
8%
Transmissions
8%
Radio Frequency
6%
Surface Preparation
6%
Reduction of Resistance
6%
Metal Contact
6%
Energy Engineering
6%
Good Thermal Stability
6%