Abstract
This work presents the design and performance of a 10Gbit/s transimpedance amplifier (TIA) implemented in a 40nm CMOS technology. The introduced TIA uses an inverter with active common-drain feedback (ICDF-TIA). The TIA is followed by a two-stage differential amplifier and a 50 differential output driver to provide an interface to the measurement setup. The optical receiver shows an optical sensitivity of 19dBm for a BER= 10 12. The transimpedance amplifier achieves a transimpedance gain of 47dB, 8GHz bandwidth with 0.45pF total input capacitance for the photodiode, ESD protection and input PAD. The TIA occupies 0.0002mm 2 whereas the complete optical receiver occupies a chip area of 0.16mm 2. The power consumption of the TIA is only 2mW and the complete chip dissipates 16mW for a 1.1V single supply voltage. The complete optical receiver has a 58dB transimpedance gain and 7GHz bandwidth.
| Original language | English |
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| Pages | 1728-1731 |
| Number of pages | 4 |
| DOIs | |
| Publication status | Published - 2012 |
| Externally published | Yes |
| Event | 2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 - Seoul, Korea, Republic of Duration: May 20 2012 → May 23 2012 |
Conference
| Conference | 2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 |
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| Country/Territory | Korea, Republic of |
| City | Seoul |
| Period | 5/20/12 → 5/23/12 |
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering