300-GHz Band 20-Gbps ASK Transmitter Module Based on InP-HEMT MMICs

Hiroshi Hamada; Toshihiko Kosugi; Ho Jin Song; Makoto Yaita; Amine El Moutaouakil; Hideaki Matsuzaki; Akihiko Hirata

doi:10.1109/CSICS.2015.7314461

300-GHz Band 20-Gbps ASK Transmitter Module Based on InP-HEMT MMICs

Hiroshi Hamada, Toshihiko Kosugi, Ho Jin Song, Makoto Yaita, Amine El Moutaouakil, Hideaki Matsuzaki, Akihiko Hirata

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

34 Citations (Scopus)

Abstract

This paper presents a module for a 300-GHz, 20-Gbps amplitude-shift keying (ASK) transmitter using monolithic microwave integrated circuits (MMICs) based on 80-nm-gate InP high-electron-mobility-transistor (InP-HEMT) technology. The MMICs consist of a power amplifier and modulator circuit. Output power of 9.5 dBm at 300 GHz was achieved in the power amplifier module by utilizing the back side DC power line in the chip layout. A travelling-wave switch used as an ASK modulator exhibited group delay deviation of ± 3.9 ps, which is small enough to achieve 20 Gbps modulation. Back-to-back data transmission at 300 GHz was demonstrated in an experiment using the ASK transmitter module. A Q factor of 6.3 was obtained as the receiver eye pattern, which is equivalent to a bit error rate (BER) of < 1 × 10-9 with 20 Gbps data transmission at 300 GHz frequency.

Original language	English
Title of host publication	2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479984947
DOIs	https://doi.org/10.1109/CSICS.2015.7314461
Publication status	Published - Oct 30 2015
Externally published	Yes
Event	37th IEEE International Symposium on Workload Characterization, IISWC 2015 - New Orleans, United States Duration: Oct 11 2015 → Oct 14 2015

Publication series

Name	2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015

Conference

Conference	37th IEEE International Symposium on Workload Characterization, IISWC 2015
Country/Territory	United States
City	New Orleans
Period	10/11/15 → 10/14/15

Keywords

300 GHz
MMIC
modulator
power amplifier

ASJC Scopus subject areas

Electrical and Electronic Engineering
Computer Networks and Communications
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/CSICS.2015.7314461

Cite this

Hamada, H., Kosugi, T., Song, H. J., Yaita, M., El Moutaouakil, A., Matsuzaki, H., & Hirata, A. (2015). 300-GHz Band 20-Gbps ASK Transmitter Module Based on InP-HEMT MMICs. In 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015 Article 7314461 (2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/CSICS.2015.7314461

300-GHz Band 20-Gbps ASK Transmitter Module Based on InP-HEMT MMICs. / Hamada, Hiroshi; Kosugi, Toshihiko; Song, Ho Jin et al.
2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7314461 (2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Hamada, H, Kosugi, T, Song, HJ, Yaita, M, El Moutaouakil, A, Matsuzaki, H & Hirata, A 2015, 300-GHz Band 20-Gbps ASK Transmitter Module Based on InP-HEMT MMICs. in 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015., 7314461, 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015, Institute of Electrical and Electronics Engineers Inc., 37th IEEE International Symposium on Workload Characterization, IISWC 2015, New Orleans, United States, 10/11/15. https://doi.org/10.1109/CSICS.2015.7314461

Hamada H, Kosugi T, Song HJ, Yaita M, El Moutaouakil A, Matsuzaki H et al. 300-GHz Band 20-Gbps ASK Transmitter Module Based on InP-HEMT MMICs. In 2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7314461. (2015 IEEE Compound Semiconductor Integrated Circuit Symposium, CSICS 2015). doi: 10.1109/CSICS.2015.7314461

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abstract = "This paper presents a module for a 300-GHz, 20-Gbps amplitude-shift keying (ASK) transmitter using monolithic microwave integrated circuits (MMICs) based on 80-nm-gate InP high-electron-mobility-transistor (InP-HEMT) technology. The MMICs consist of a power amplifier and modulator circuit. Output power of 9.5 dBm at 300 GHz was achieved in the power amplifier module by utilizing the back side DC power line in the chip layout. A travelling-wave switch used as an ASK modulator exhibited group delay deviation of ± 3.9 ps, which is small enough to achieve 20 Gbps modulation. Back-to-back data transmission at 300 GHz was demonstrated in an experiment using the ASK transmitter module. A Q factor of 6.3 was obtained as the receiver eye pattern, which is equivalent to a bit error rate (BER) of < 1 × 10-9 with 20 Gbps data transmission at 300 GHz frequency.",

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AU - Kosugi, Toshihiko

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AU - Yaita, Makoto

AU - El Moutaouakil, Amine

AU - Matsuzaki, Hideaki

AU - Hirata, Akihiko

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N2 - This paper presents a module for a 300-GHz, 20-Gbps amplitude-shift keying (ASK) transmitter using monolithic microwave integrated circuits (MMICs) based on 80-nm-gate InP high-electron-mobility-transistor (InP-HEMT) technology. The MMICs consist of a power amplifier and modulator circuit. Output power of 9.5 dBm at 300 GHz was achieved in the power amplifier module by utilizing the back side DC power line in the chip layout. A travelling-wave switch used as an ASK modulator exhibited group delay deviation of ± 3.9 ps, which is small enough to achieve 20 Gbps modulation. Back-to-back data transmission at 300 GHz was demonstrated in an experiment using the ASK transmitter module. A Q factor of 6.3 was obtained as the receiver eye pattern, which is equivalent to a bit error rate (BER) of < 1 × 10-9 with 20 Gbps data transmission at 300 GHz frequency.

AB - This paper presents a module for a 300-GHz, 20-Gbps amplitude-shift keying (ASK) transmitter using monolithic microwave integrated circuits (MMICs) based on 80-nm-gate InP high-electron-mobility-transistor (InP-HEMT) technology. The MMICs consist of a power amplifier and modulator circuit. Output power of 9.5 dBm at 300 GHz was achieved in the power amplifier module by utilizing the back side DC power line in the chip layout. A travelling-wave switch used as an ASK modulator exhibited group delay deviation of ± 3.9 ps, which is small enough to achieve 20 Gbps modulation. Back-to-back data transmission at 300 GHz was demonstrated in an experiment using the ASK transmitter module. A Q factor of 6.3 was obtained as the receiver eye pattern, which is equivalent to a bit error rate (BER) of < 1 × 10-9 with 20 Gbps data transmission at 300 GHz frequency.

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300-GHz Band 20-Gbps ASK Transmitter Module Based on InP-HEMT MMICs

Abstract

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Keywords

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