In this paper, a modified resistive shunt feedback topology is proposed that performs noise cancelation and serves as an opposite polarity non-linearity generator to cancel the distortion produced by the main stage. The proposed topology has a bandwidth similar to a resistive shunt feedback LNA, but with a superior noise figure (NF) and linearity. The proposed wideband LNA is fabricated in 130 nm CMOS technology and occupies an area of 0.5 mm2. Measured results depict 3-dB bandwidth from 50 to 830 MHz. The measured gain and NF at 420 MHz are 17 dB and 2.2 dB, respectively. The high value of the 1/f noise is one of the key problems in low-frequency CMOS designs. The proposed topology also addresses this challenge and a low NF is attained at low frequencies. Measured S11 and S22 are better than −8.9 dB and −8.5 dB, respectively within the 0.05–1 GHz band. The 1-dB compression point is −11.5 dBm at 700 MHz, while the IIP3 is −6.3 dBm. The forward core consumes 14 mW from a 1.8 V supply. This LNA is suitable for VHF and UHF SDR communication receivers.
|Number of pages||11|
|Journal||Integration, the VLSI Journal|
|Publication status||Published - Jan 2018|
ASJC Scopus subject areas
- Hardware and Architecture
- Electrical and Electronic Engineering