5th International Conference on Nanoscience and Nanotechnology (ICONN 2019) 28–30 January 2019, SRM Institute of Science and Technology, Kattankulathur, Chennai, India

K. Kamala Bharathi; E. Senthil Kumar; S. Chandramohan; Sreejith Karthikeyan; Yasuhiro Hayakawa; John Kennedy

doi:10.1016/j.apsusc.2019.144682

5th International Conference on Nanoscience and Nanotechnology (ICONN 2019) 28–30 January 2019, SRM Institute of Science and Technology, Kattankulathur, Chennai, India

K. Kamala Bharathi, E. Senthil Kumar, S. Chandramohan, Sreejith Karthikeyan, Yasuhiro Hayakawa, John Kennedy

Department of Physics

Research output: Contribution to journal › Editorial › peer-review

Original language	English
Article number	144682
Journal	Applied Surface Science
Volume	509
DOIs	https://doi.org/10.1016/j.apsusc.2019.144682
Publication status	Published - Apr 15 2020

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/j.apsusc.2019.144682

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Kamala Bharathi, K., Senthil Kumar, E., Chandramohan, S., Karthikeyan, S., Hayakawa, Y., & Kennedy, J. (2020). 5th International Conference on Nanoscience and Nanotechnology (ICONN 2019) 28–30 January 2019, SRM Institute of Science and Technology, Kattankulathur, Chennai, India. Applied Surface Science, 509, Article 144682. https://doi.org/10.1016/j.apsusc.2019.144682

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title = "5th International Conference on Nanoscience and Nanotechnology (ICONN 2019) 28–30 January 2019, SRM Institute of Science and Technology, Kattankulathur, Chennai, India",

author = "{Kamala Bharathi}, K. and {Senthil Kumar}, E. and S. Chandramohan and Sreejith Karthikeyan and Yasuhiro Hayakawa and John Kennedy",

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AU - Kamala Bharathi, K.

AU - Senthil Kumar, E.

AU - Chandramohan, S.

AU - Karthikeyan, Sreejith

AU - Hayakawa, Yasuhiro

AU - Kennedy, John

PY - 2020/4/15

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5th International Conference on Nanoscience and Nanotechnology (ICONN 2019) 28–30 January 2019, SRM Institute of Science and Technology, Kattankulathur, Chennai, India

ASJC Scopus subject areas

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