97 dB Dynamic Range CMOS Image Sensor Based on Diode Connected Load

Abeer Elsayed, Mohamed Atef, Mohamed Abdelgawad

Research output: Chapter in Book/Report/Conference proceedingConference contribution


This paper introduces the design and implementation of a wide dynamic range CMOS image sensor (CIS) with high sensitivity. The sensor is designed and implemented in a 130 nm CMOS technology. The pixel occupies an area of 3 μm × 3 μm and consists of six NMOS transistors with one capacitor. The readout circuit features an extremely low output noise of 19 μVrms with a 4 MHz bandwidth. Power dissipation of 11.2 μW was achieved at low voltage operation of 1.6 V. The sensor has a combination of low noise and a 97 dB wide dynamic range due to the diode connected load configuration.

Original languageEnglish
Title of host publicationProceedings of 2019 36th National Radio Science Conference, NRSC 2019
EditorsRowayda Sadek, Ahmad Abdullatif Goudah, Sherif ElDiasty
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages8
ISBN (Electronic)9781728107530
Publication statusPublished - Apr 2019
Externally publishedYes
Event36th National Radio Science Conference, NRSC 2019 - Port Said, Egypt
Duration: Apr 16 2019Apr 18 2019

Publication series

NameNational Radio Science Conference, NRSC, Proceedings


Conference36th National Radio Science Conference, NRSC 2019
CityPort Said


  • CMOS Image Sensor (CIS)
  • Diode Connected Load
  • Wide Dynamic Range (WDR)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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