97 dB Dynamic Range CMOS Image Sensor Based on Diode Connected Load

Abeer Elsayed; Mohamed Atef; Mohamed Abdelgawad

doi:10.1109/NRSC.2019.8734592

97 dB Dynamic Range CMOS Image Sensor Based on Diode Connected Load

Abeer Elsayed, Mohamed Atef, Mohamed Abdelgawad

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper introduces the design and implementation of a wide dynamic range CMOS image sensor (CIS) with high sensitivity. The sensor is designed and implemented in a 130 nm CMOS technology. The pixel occupies an area of 3 μm × 3 μm and consists of six NMOS transistors with one capacitor. The readout circuit features an extremely low output noise of 19 μV_rms with a 4 MHz bandwidth. Power dissipation of 11.2 μW was achieved at low voltage operation of 1.6 V. The sensor has a combination of low noise and a 97 dB wide dynamic range due to the diode connected load configuration.

Original language	English
Title of host publication	Proceedings of 2019 36th National Radio Science Conference, NRSC 2019
Editors	Rowayda Sadek, Ahmad Abdullatif Goudah, Sherif ElDiasty
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	378-385
Number of pages	8
ISBN (Electronic)	9781728107530
DOIs	https://doi.org/10.1109/NRSC.2019.8734592
Publication status	Published - Apr 2019
Externally published	Yes
Event	36th National Radio Science Conference, NRSC 2019 - Port Said, Egypt Duration: Apr 16 2019 → Apr 18 2019

Publication series

Name	National Radio Science Conference, NRSC, Proceedings
Volume	2019-April

Conference

Conference	36th National Radio Science Conference, NRSC 2019
Country/Territory	Egypt
City	Port Said
Period	4/16/19 → 4/18/19

Keywords

CMOS Image Sensor (CIS)
Diode Connected Load
Wide Dynamic Range (WDR)

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1109/NRSC.2019.8734592

Cite this

Elsayed, A., Atef, M., & Abdelgawad, M. (2019). 97 dB Dynamic Range CMOS Image Sensor Based on Diode Connected Load. In R. Sadek, A. A. Goudah, & S. ElDiasty (Eds.), Proceedings of 2019 36th National Radio Science Conference, NRSC 2019 (pp. 378-385). [8734592] (National Radio Science Conference, NRSC, Proceedings; Vol. 2019-April). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NRSC.2019.8734592

97 dB Dynamic Range CMOS Image Sensor Based on Diode Connected Load. / Elsayed, Abeer; Atef, Mohamed; Abdelgawad, Mohamed.
Proceedings of 2019 36th National Radio Science Conference, NRSC 2019. ed. / Rowayda Sadek; Ahmad Abdullatif Goudah; Sherif ElDiasty. Institute of Electrical and Electronics Engineers Inc., 2019. p. 378-385 8734592 (National Radio Science Conference, NRSC, Proceedings; Vol. 2019-April).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Elsayed, A, Atef, M & Abdelgawad, M 2019, 97 dB Dynamic Range CMOS Image Sensor Based on Diode Connected Load. in R Sadek, AA Goudah & S ElDiasty (eds), Proceedings of 2019 36th National Radio Science Conference, NRSC 2019., 8734592, National Radio Science Conference, NRSC, Proceedings, vol. 2019-April, Institute of Electrical and Electronics Engineers Inc., pp. 378-385, 36th National Radio Science Conference, NRSC 2019, Port Said, Egypt, 4/16/19. https://doi.org/10.1109/NRSC.2019.8734592

Elsayed A, Atef M, Abdelgawad M. 97 dB Dynamic Range CMOS Image Sensor Based on Diode Connected Load. In Sadek R, Goudah AA, ElDiasty S, editors, Proceedings of 2019 36th National Radio Science Conference, NRSC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 378-385. 8734592. (National Radio Science Conference, NRSC, Proceedings). doi: 10.1109/NRSC.2019.8734592

Elsayed, Abeer ; Atef, Mohamed ; Abdelgawad, Mohamed. / 97 dB Dynamic Range CMOS Image Sensor Based on Diode Connected Load. Proceedings of 2019 36th National Radio Science Conference, NRSC 2019. editor / Rowayda Sadek ; Ahmad Abdullatif Goudah ; Sherif ElDiasty. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 378-385 (National Radio Science Conference, NRSC, Proceedings).

@inproceedings{baa33986f76a40bb8b44e0e3e7a01de6,

title = "97 dB Dynamic Range CMOS Image Sensor Based on Diode Connected Load",

abstract = "This paper introduces the design and implementation of a wide dynamic range CMOS image sensor (CIS) with high sensitivity. The sensor is designed and implemented in a 130 nm CMOS technology. The pixel occupies an area of 3 μm × 3 μm and consists of six NMOS transistors with one capacitor. The readout circuit features an extremely low output noise of 19 μVrms with a 4 MHz bandwidth. Power dissipation of 11.2 μW was achieved at low voltage operation of 1.6 V. The sensor has a combination of low noise and a 97 dB wide dynamic range due to the diode connected load configuration.",

keywords = "CMOS Image Sensor (CIS), Diode Connected Load, Wide Dynamic Range (WDR)",

author = "Abeer Elsayed and Mohamed Atef and Mohamed Abdelgawad",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 36th National Radio Science Conference, NRSC 2019 ; Conference date: 16-04-2019 Through 18-04-2019",

year = "2019",

month = apr,

doi = "10.1109/NRSC.2019.8734592",

language = "English",

series = "National Radio Science Conference, NRSC, Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "378--385",

editor = "Rowayda Sadek and Goudah, {Ahmad Abdullatif} and Sherif ElDiasty",

booktitle = "Proceedings of 2019 36th National Radio Science Conference, NRSC 2019",

}

TY - GEN

T1 - 97 dB Dynamic Range CMOS Image Sensor Based on Diode Connected Load

AU - Elsayed, Abeer

AU - Atef, Mohamed

AU - Abdelgawad, Mohamed

PY - 2019/4

Y1 - 2019/4

N2 - This paper introduces the design and implementation of a wide dynamic range CMOS image sensor (CIS) with high sensitivity. The sensor is designed and implemented in a 130 nm CMOS technology. The pixel occupies an area of 3 μm × 3 μm and consists of six NMOS transistors with one capacitor. The readout circuit features an extremely low output noise of 19 μVrms with a 4 MHz bandwidth. Power dissipation of 11.2 μW was achieved at low voltage operation of 1.6 V. The sensor has a combination of low noise and a 97 dB wide dynamic range due to the diode connected load configuration.

AB - This paper introduces the design and implementation of a wide dynamic range CMOS image sensor (CIS) with high sensitivity. The sensor is designed and implemented in a 130 nm CMOS technology. The pixel occupies an area of 3 μm × 3 μm and consists of six NMOS transistors with one capacitor. The readout circuit features an extremely low output noise of 19 μVrms with a 4 MHz bandwidth. Power dissipation of 11.2 μW was achieved at low voltage operation of 1.6 V. The sensor has a combination of low noise and a 97 dB wide dynamic range due to the diode connected load configuration.

KW - CMOS Image Sensor (CIS)

KW - Diode Connected Load

KW - Wide Dynamic Range (WDR)

UR - http://www.scopus.com/inward/record.url?scp=85068044670&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85068044670&partnerID=8YFLogxK

U2 - 10.1109/NRSC.2019.8734592

DO - 10.1109/NRSC.2019.8734592

M3 - Conference contribution

AN - SCOPUS:85068044670

T3 - National Radio Science Conference, NRSC, Proceedings

SP - 378

EP - 385

BT - Proceedings of 2019 36th National Radio Science Conference, NRSC 2019

A2 - Sadek, Rowayda

A2 - Goudah, Ahmad Abdullatif

A2 - ElDiasty, Sherif

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 36th National Radio Science Conference, NRSC 2019

Y2 - 16 April 2019 through 18 April 2019

ER -

97 dB Dynamic Range CMOS Image Sensor Based on Diode Connected Load

Abstract

Publication series

Conference

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this