This paper presents the design of a single-ended positive feedback Common Gate (CG) Low Noise Amplifier (LNA) for 5G applications. Positive feedback is utilized to achieve the trade-off between the input matching, the gain and the noise factor (NF) of the LNA. The positive feedback inherently cancels the noise produced by the input CG transistor. The proposed LNA is designed and fabricated in 150 nm CMOS by L-Foundry. At 1.41 GHz, the measured S11 and S22 are better than -20 dB and -8.4 dB, respectively. The highest voltage gain is 16.17 dB with a NF of 3.64 dB. The complete chip has an area of 1 mm2. The LNA's power dissipation is only 2.6 mW with a 1 dB compression point of -13 dBm. The simple, low power and single-ended architecture of the proposed LNA allows it to be implemented in phase array and Multiple Input Multiple Output (MIMO) radars, which have limited input and output pads and constrained power budgets for on-board components.