A fresh look at majority multiplexing when devices get into the picture

Valeriu Beiu, Walid Ibrahim, Sanja Lazarova-Molnar

Research output: Chapter in Book/Report/Conference proceedingConference contribution

13 Citations (Scopus)

Abstract

In this paper we present the first detailed analysis of von Neumann multiplexing (vN-MUX) using majority (MAJ) gates of small fan-ins Δ (MAJ-Δ) with respect to the probability of failure of the elementary (nano-)devices. Only gates with small fan-ins have been considered, as gates with large fan-ins do not seem practical (at least in the short term) in future technologies. The extensions from an exact counting algorithm (for gate defects and faults only) to device-level failures will allow us to estimate and characterize MAJ-Δ vN-MUX with respect to device-level malfunctions. The reported results depart significantly from all known gate-level analyses-either theoretical or based on simulations. These should be quite important as providing a detailed picture of the behavior of MAJ-Δ vN-MUX when considering the (unreliability of the elementary (nano-)devices (as opposed to gate-level only analyses). The main conclusion is that small fan-in gates (and redundancy schemes relying on such gates) are quite promising-in spite of all previous results at gate-level showing the contrary.

Original languageEnglish
Title of host publication2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings
Pages883-888
Number of pages6
DOIs
Publication statusPublished - 2007
Event2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007 - Hong Kong, China
Duration: Aug 2 2007Aug 5 2007

Publication series

Name2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007, Proceedings

Other

Other2007 7th IEEE International Conference on Nanotechnology - IEEE-NANO 2007
Country/TerritoryChina
CityHong Kong
Period8/2/078/5/07

Keywords

  • Majority gates
  • Multiplexing
  • Nano-architectures
  • Nano-devices
  • Reliability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

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