Abstract
A total concentration fixed-grid method is presented in this paper to model the two-dimensional wet chemical etching. Two limiting cases are discussed, namely - the diffusion-controlled etching and the reaction-controlled etching. A total concentration, which is the sum of the unreacted and the reacted etchant concentrations, is defined. Using this newly defined total concentration, the governing equation also contains the interface condition. A new update procedure for the reacted concentration is formulated. For demonstration, the finite-volume method is used to solve the governing equation with prescribed initial and boundary conditions. The effects of reaction rate at the etchant-substrate interface are examined. The results obtained using the total concentration method, are compared with available results from the literature.
| Original language | English |
|---|---|
| Pages (from-to) | 509-516 |
| Number of pages | 8 |
| Journal | Journal of Heat Transfer |
| Volume | 129 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - Apr 2007 |
| Externally published | Yes |
Keywords
- Finite-volume method
- Fixed-grid method
- Numerical methods
- Wet chemical etching
ASJC Scopus subject areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
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