TY - JOUR
T1 - A Voltage-Tuned Terahertz Absorber Based on MoS2/Graphene Nanoribbon Structure
AU - Samy, Omnia
AU - Belmoubarik, Mohamed
AU - Otsuji, Taiichi
AU - El Moutaouakil, Amine
N1 - Publisher Copyright:
© 2023 by the authors.
PY - 2023/6
Y1 - 2023/6
N2 - Terahertz frequency has promising applications in communication, security scanning, medical imaging, and industry. THz absorbers are one of the required components for future THz applications. However, nowadays, obtaining a high absorption, simple structure, and ultrathin absorber is a challenge. In this work, we present a thin THz absorber that can be easily tuned through the whole THz range (0.1–10 THz) by applying a low gate voltage (<1 V). The structure is based on cheap and abundant materials (MoS2/graphene). Nanoribbons of MoS2/graphene heterostructure are laid over a SiO2 substrate with an applied vertical gate voltage. The computational model shows that we can achieve an absorptance of approximately 50% of the incident light. The absorptance frequency can be tuned through varying the structure and the substrate dimensions, where the nanoribbon width can be varied approximately from 90 nm to 300 nm, while still covering the whole THz range. The structure performance is not affected by high temperatures (500 K and above), so it is thermally stable. The proposed structure represents a low-voltage, easily tunable, low-cost, and small-size THz absorber that can be used in imaging and detection. It is an alternative to expensive THz metamaterial-based absorbers.
AB - Terahertz frequency has promising applications in communication, security scanning, medical imaging, and industry. THz absorbers are one of the required components for future THz applications. However, nowadays, obtaining a high absorption, simple structure, and ultrathin absorber is a challenge. In this work, we present a thin THz absorber that can be easily tuned through the whole THz range (0.1–10 THz) by applying a low gate voltage (<1 V). The structure is based on cheap and abundant materials (MoS2/graphene). Nanoribbons of MoS2/graphene heterostructure are laid over a SiO2 substrate with an applied vertical gate voltage. The computational model shows that we can achieve an absorptance of approximately 50% of the incident light. The absorptance frequency can be tuned through varying the structure and the substrate dimensions, where the nanoribbon width can be varied approximately from 90 nm to 300 nm, while still covering the whole THz range. The structure performance is not affected by high temperatures (500 K and above), so it is thermally stable. The proposed structure represents a low-voltage, easily tunable, low-cost, and small-size THz absorber that can be used in imaging and detection. It is an alternative to expensive THz metamaterial-based absorbers.
KW - THz absorbers
KW - THz applications
KW - graphene
KW - monolayer MoS
KW - monolayer black phosphorous
KW - nanoribbons
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U2 - 10.3390/nano13111716
DO - 10.3390/nano13111716
M3 - Article
AN - SCOPUS:85163135478
SN - 2079-4991
VL - 13
JO - Nanomaterials
JF - Nanomaterials
IS - 11
M1 - 1716
ER -