Abstract
We present a self-consistent pseudopotential calculation of the valence-band offset at the GaAs/InAs (001) strained interface which is chosen as an example of isovalent, common-anion, lattice-mismatched heterojunctions. Our results show that the valence-band offset can be tuned by about 0.5 eV going from GaAs to InAs substrates, mainly due to the different effect of strain on the topmost valence-band state of the two bulk materials.
| Original language | English |
|---|---|
| Pages (from-to) | 17607-17610 |
| Number of pages | 4 |
| Journal | Physical Review B-Condensed Matter |
| Volume | 48 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 1993 |
| Externally published | Yes |
ASJC Scopus subject areas
- Condensed Matter Physics
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