Anomalous behaviors of cubic GaInN ternary alloys

Research output: Chapter in Book/Report/Conference proceedingConference contribution


The electronic and optical properties of cubic Ga1-xIn xN ternary alloys are theoretically investigated using the sp 3s* tight-binding model, with the inclusion of spin-orbit interaction, versus composition and valence-band offset (VBO), stimulating the lattice-relaxation effects. Usually, the bowing of the band-gap energy in the common-anion ternary alloys should be vanishingly small as far as the virtual-crystal approximation remains valid. In contrary to this, the present alloys are shown to possess three unusual characteristics: (i) They possess rather strong bowing character with b > 2.0 eV; (ii) the bowing parameter is composition dependent b = b(x); and (iii) the Stokes shift between emission and absorption is so large that can even reach 200 meV when x ≈ 0.5. Two reasons are claimed to cause such behaviors; namely: the strong electro-negativity of nitrogen atoms and the large lattice relaxation as being induced by the large lattice-mismatch between the two constituents (GaN and InN). The favorable comparison with the available experimental data corroborates the above claims.

Original languageEnglish
Title of host publicationChina Semiconductor Technology International Conference 2011, CSTIC 2011
Number of pages6
Publication statusPublished - 2011
Event10th China Semiconductor Technology International Conference 2011, CSTIC 2011 - Shanghai, China
Duration: Mar 13 2011Mar 14 2011

Publication series

NameECS Transactions
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737


Other10th China Semiconductor Technology International Conference 2011, CSTIC 2011

ASJC Scopus subject areas

  • General Engineering


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