Assembly of bismuth clusters into nanowires using etched V-grooves as templates

A. I. Ayesh; J. G. Partridge; S. A. Brown; R. Reichel; A. D.F. Dunbar

doi:10.1109/COMMAD.2004.1577557

Assembly of bismuth clusters into nanowires using etched V-grooves as templates

A. I. Ayesh, J. G. Partridge, S. A. Brown, R. Reichel, A. D.F. Dunbar

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The cluster assembly method reported here employs V-grooves as templates for nanowire fabrication. This technique allows the formation of contacted electrically conducting nanowires using simple optical lithography and without painstaking manipulation of the clusters. In-vacuum, temperature dependent I(V) measurements were performed on Bi wires with widths ∼1 μm and lengths 50 μm. The temperature dependent resistance of the Bi wires is explained by the variation in the carrier concentration in Bi with temperature.

Original language	English
Title of host publication	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings
Pages	327-330
Number of pages	4
DOIs	https://doi.org/10.1109/COMMAD.2004.1577557
Publication status	Published - 2005
Externally published	Yes
Event	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia Duration: Dec 8 2004 → Dec 10 2004

Publication series

Name	Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Other

Other	COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
Country/Territory	Australia
City	Bribane, QLD
Period	12/8/04 → 12/10/04

Keywords

Bismuth
Nanowires
Templated assembly

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1109/COMMAD.2004.1577557

Cite this

Ayesh, A. I., Partridge, J. G., Brown, S. A., Reichel, R., & Dunbar, A. D. F. (2005). Assembly of bismuth clusters into nanowires using etched V-grooves as templates. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings (pp. 327-330). Article 1577557 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). https://doi.org/10.1109/COMMAD.2004.1577557

Assembly of bismuth clusters into nanowires using etched V-grooves as templates. / Ayesh, A. I.; Partridge, J. G.; Brown, S. A. et al.
COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. p. 327-330 1577557 (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ayesh, AI, Partridge, JG, Brown, SA, Reichel, R & Dunbar, ADF 2005, Assembly of bismuth clusters into nanowires using etched V-grooves as templates. in COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings., 1577557, Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD, pp. 327-330, COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Bribane, QLD, Australia, 12/8/04. https://doi.org/10.1109/COMMAD.2004.1577557

Ayesh AI, Partridge JG, Brown SA, Reichel R, Dunbar ADF. Assembly of bismuth clusters into nanowires using etched V-grooves as templates. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. p. 327-330. 1577557. (Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD). doi: 10.1109/COMMAD.2004.1577557

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abstract = "The cluster assembly method reported here employs V-grooves as templates for nanowire fabrication. This technique allows the formation of contacted electrically conducting nanowires using simple optical lithography and without painstaking manipulation of the clusters. In-vacuum, temperature dependent I(V) measurements were performed on Bi wires with widths ∼1 μm and lengths 50 μm. The temperature dependent resistance of the Bi wires is explained by the variation in the carrier concentration in Bi with temperature.",

keywords = "Bismuth, Nanowires, Templated assembly",

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Assembly of bismuth clusters into nanowires using etched V-grooves as templates

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Keywords

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