Abstract
This paper investigates a silicon (Si) avalanche double photodiode (ADPD) fabricated in 40-nm standard CMOS technology. Two different types of double photodiodes (DPDs) will be introduced. The first one is a P-well/deep-N-well/P- substrate(PW/DNW/P-substrate) DPD, and the second one is a P+/N-well/ P-substrate P+/NW/P-substrate) DPD. The basic structure of the proposed ADPD is formed by P+/NW and NW/P-substrate junctions in which the avalanche effect occurs at the P+/NW junction. The P +/NW/P-substrate ADPD demonstrates responsivity of 0.84 A/W and a 3-dB electrical bandwidth of 0.7 GHz at 850 nm. For 660 nm, the ADPD shows a responsivity of 0.49 A/W with an electrical bandwidth of 1.8 GHz. For 520 nm, a responsivity of 2.04 A/W and an electrical bandwidth of 1.4 GHz are achieved.
Original language | English |
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Article number | 6459520 |
Pages (from-to) | 350-356 |
Number of pages | 7 |
Journal | IEEE Journal of Quantum Electronics |
Volume | 49 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2013 |
Externally published | Yes |
Keywords
- Avalanche photodiodes
- double photodiodes (DPD)
- nanometer CMOS process
- silicon photodiodes
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering