Band structure of Ga1 - xAlxP under a uniaxial stress

N. Badi; H. Abid; B. Soudini; N. Amrane; M. Hammadi; M. Driz; B. Khelifa; H. Aourag

doi:10.1016/0927-0256(94)90152-X

Band structure of Ga_{1 - x}Al_xP under a uniaxial stress

N. Badi, H. Abid, B. Soudini, N. Amrane, M. Hammadi, M. Driz, B. Khelifa, H. Aourag

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

The band structure of Ga_{1 - x}Al_xP under a uniaxial stress is calculated in the virtual crystal approximation (VCA) using the empirical pseudopotential method (EPM). We discuss the optical transitions in this system under a static uniaxial compression and a tension along a cubic direction [100], on the light of the change in energy caused by these stresses for states of high symmetry near the top of the valence band and the bottom of the conduction band.

Original language	English
Pages (from-to)	50-54
Number of pages	5
Journal	Computational Materials Science
Volume	3
Issue number	1
DOIs	https://doi.org/10.1016/0927-0256(94)90152-X
Publication status	Published - Sept 1994
Externally published	Yes

ASJC Scopus subject areas

General Computer Science
General Chemistry
General Materials Science
Mechanics of Materials
General Physics and Astronomy
Computational Mathematics

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10.1016/0927-0256(94)90152-X

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title = "Band structure of Ga1 - xAlxP under a uniaxial stress",

abstract = "The band structure of Ga1 - xAlxP under a uniaxial stress is calculated in the virtual crystal approximation (VCA) using the empirical pseudopotential method (EPM). We discuss the optical transitions in this system under a static uniaxial compression and a tension along a cubic direction [100], on the light of the change in energy caused by these stresses for states of high symmetry near the top of the valence band and the bottom of the conduction band.",

author = "N. Badi and H. Abid and B. Soudini and N. Amrane and M. Hammadi and M. Driz and B. Khelifa and H. Aourag",

year = "1994",

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AU - Badi, N.

AU - Abid, H.

AU - Soudini, B.

AU - Amrane, N.

AU - Hammadi, M.

AU - Driz, M.

AU - Khelifa, B.

AU - Aourag, H.

PY - 1994/9

Y1 - 1994/9

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AB - The band structure of Ga1 - xAlxP under a uniaxial stress is calculated in the virtual crystal approximation (VCA) using the empirical pseudopotential method (EPM). We discuss the optical transitions in this system under a static uniaxial compression and a tension along a cubic direction [100], on the light of the change in energy caused by these stresses for states of high symmetry near the top of the valence band and the bottom of the conduction band.

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JO - Computational Materials Science

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Band structure of Ga_{1 - x}Al_xP under a uniaxial stress

Abstract

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