Abstract
The band structure of Ga1 - xAlxP under a uniaxial stress is calculated in the virtual crystal approximation (VCA) using the empirical pseudopotential method (EPM). We discuss the optical transitions in this system under a static uniaxial compression and a tension along a cubic direction [100], on the light of the change in energy caused by these stresses for states of high symmetry near the top of the valence band and the bottom of the conduction band.
| Original language | English |
|---|---|
| Pages (from-to) | 50-54 |
| Number of pages | 5 |
| Journal | Computational Materials Science |
| Volume | 3 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - Sept 1994 |
| Externally published | Yes |
ASJC Scopus subject areas
- General Computer Science
- General Chemistry
- General Materials Science
- Mechanics of Materials
- General Physics and Astronomy
- Computational Mathematics
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