Bi-stable resistive switching characteristics in Ti-doped ZnO thin films

Adnan Younis, Dewei Chu, Sean Li

Research output: Contribution to journalArticlepeer-review

39 Citations (Scopus)


Ti-doped ZnO (ZnO/Ti) thin films were grown on indium tin oxide substrates by a facile electrodeposition route. The morphology, crystal structure and resistive switching properties were examined, respectively. The morphology reveals that grains are composed of small crystals. The (002) preferential growth along c-axis of ZnO/Ti could be observed from structural analysis. The XPS study shows the presence of oxygen vacancies in the prepared films. Typical bipolar and reversible resistance switching effects were observed. High ROFF/RON ratios (approximately 14) and low operation voltages within 100 switching cycles are obtained. The filament theory and the interface effect are suggested to be responsible for the resistive switching phenomenon.

Original languageEnglish
Article number154
Pages (from-to)1-6
Number of pages6
JournalNanoscale Research Letters
Issue number1
Publication statusPublished - 2013
Externally publishedYes


  • Electrodeposition
  • Nanostructure
  • Resistive switching

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics


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