Bipolar resistive switching characteristics in LaTiO3 nanosheets

Xi Lin; Adnan Younis; Xinrun Xiong; Kejun Dong; Dewei Chu; Sean Li

doi:10.1039/c4ra01626b

Bipolar resistive switching characteristics in LaTiO₃ nanosheets

Xi Lin, Adnan Younis, Xinrun Xiong, Kejun Dong, Dewei Chu, Sean Li

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

In this work, we reported a facile approach to fabricate LaTiO₃ (LTO) nanosheets for resistive switching memory applications. Different from other lanthanum titanates synthesized via solvothermal approaches, herein the unique composition ratio of La:Ti: O = 1:1:3 has been found. The drop-coating method was utilized to deposit LTO films followed by gold top electrode deposition to complete device fabrication. The pristine device was found to exhibit excellent bipolar resistance switching characteristics with resistance ON/OFF ratio of ∼100, high uniformity in switching parameters and stability at elevated temperatures as well. The origin of switching behaviour in these devices on the basis of formation and annihilation of conducting filaments was addressed.

Original language	English
Pages (from-to)	18127-18131
Number of pages	5
Journal	RSC Advances
Volume	4
Issue number	35
DOIs	https://doi.org/10.1039/c4ra01626b
Publication status	Published - 2014
Externally published	Yes

ASJC Scopus subject areas

General Chemistry
General Chemical Engineering

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10.1039/c4ra01626b

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AU - Lin, Xi

AU - Younis, Adnan

AU - Xiong, Xinrun

AU - Dong, Kejun

AU - Chu, Dewei

AU - Li, Sean

PY - 2014

Y1 - 2014

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AB - In this work, we reported a facile approach to fabricate LaTiO3 (LTO) nanosheets for resistive switching memory applications. Different from other lanthanum titanates synthesized via solvothermal approaches, herein the unique composition ratio of La:Ti: O = 1:1:3 has been found. The drop-coating method was utilized to deposit LTO films followed by gold top electrode deposition to complete device fabrication. The pristine device was found to exhibit excellent bipolar resistance switching characteristics with resistance ON/OFF ratio of ∼100, high uniformity in switching parameters and stability at elevated temperatures as well. The origin of switching behaviour in these devices on the basis of formation and annihilation of conducting filaments was addressed.

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Bipolar resistive switching characteristics in LaTiO₃ nanosheets

Abstract

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