Bipolar resistive switching characteristics in LaTiO3 nanosheets

Xi Lin, Adnan Younis, Xinrun Xiong, Kejun Dong, Dewei Chu, Sean Li

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

In this work, we reported a facile approach to fabricate LaTiO3 (LTO) nanosheets for resistive switching memory applications. Different from other lanthanum titanates synthesized via solvothermal approaches, herein the unique composition ratio of La:Ti: O = 1:1:3 has been found. The drop-coating method was utilized to deposit LTO films followed by gold top electrode deposition to complete device fabrication. The pristine device was found to exhibit excellent bipolar resistance switching characteristics with resistance ON/OFF ratio of ∼100, high uniformity in switching parameters and stability at elevated temperatures as well. The origin of switching behaviour in these devices on the basis of formation and annihilation of conducting filaments was addressed.

Original languageEnglish
Pages (from-to)18127-18131
Number of pages5
JournalRSC Advances
Volume4
Issue number35
DOIs
Publication statusPublished - 2014
Externally publishedYes

ASJC Scopus subject areas

  • General Chemistry
  • General Chemical Engineering

Fingerprint

Dive into the research topics of 'Bipolar resistive switching characteristics in LaTiO3 nanosheets'. Together they form a unique fingerprint.

Cite this