Abstract
In this paper anodic bonding between Si and glass substrate has been investigated in detail. Thermal Bonding of Si to glass using a thin metallic intermediate layer has also been demonstrated. These processes have potential applications for microsensor fabrication and packaging that require low-temperature processing at the wafer level and good bonding strength.
| Original language | English |
|---|---|
| Pages (from-to) | 519-522 |
| Number of pages | 4 |
| Journal | Proceedings of SPIE - The International Society for Optical Engineering |
| Volume | 4746 I |
| Publication status | Published - 2002 |
| Externally published | Yes |
| Event | Physics of Semiconductor Devices - Delhi, India Duration: Dec 11 2001 → Dec 15 2001 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering