TY - GEN
T1 - Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells
AU - Sibakoti, Mandip J.
AU - Karthikeyan, Sreejith
AU - Hwang, Sehyun
AU - Bontrager, Timothy
AU - Campbell, Stephen A.
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/18
Y1 - 2016/11/18
N2 - The saturation of VOc at larger band gaps in Cu(In, Ga)Se2 devices presents a major challenge in developing high efficiency solar devices for tandem solar applications. Although recent studies have shown that recombination at the buffer/absorber interface dominates in high Ga samples with wide band gaps, the interface parameters are not well understood to accurately model the device behavior. In this work we have applied temperature dependent CV and DLCP methods to estimate the interface state density along the bandgap in CIGS and CIAGS based solar devices. We have also used DLTS to study the nature of deep levels in CIGS and CIAGS devices. Based on our analysis and device simulation results, we attribute the VOC saturation in wide gap CIAGS devices to increased recombination rate at the interface.
AB - The saturation of VOc at larger band gaps in Cu(In, Ga)Se2 devices presents a major challenge in developing high efficiency solar devices for tandem solar applications. Although recent studies have shown that recombination at the buffer/absorber interface dominates in high Ga samples with wide band gaps, the interface parameters are not well understood to accurately model the device behavior. In this work we have applied temperature dependent CV and DLCP methods to estimate the interface state density along the bandgap in CIGS and CIAGS based solar devices. We have also used DLTS to study the nature of deep levels in CIGS and CIAGS devices. Based on our analysis and device simulation results, we attribute the VOC saturation in wide gap CIAGS devices to increased recombination rate at the interface.
KW - CIAGS
KW - CIGS
KW - DLCP
KW - DLTS
KW - Electrical Characterization
KW - SCAPS modeling
KW - Wide band-gap solar cells
UR - http://www.scopus.com/inward/record.url?scp=85003698479&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85003698479&partnerID=8YFLogxK
U2 - 10.1109/PVSC.2016.7750039
DO - 10.1109/PVSC.2016.7750039
M3 - Conference contribution
AN - SCOPUS:85003698479
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 2263
EP - 2268
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Y2 - 5 June 2016 through 10 June 2016
ER -