Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells

Mandip J. Sibakoti; Sreejith Karthikeyan; Sehyun Hwang; Timothy Bontrager; Stephen A. Campbell

doi:10.1109/PVSC.2017.8366517

Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells

Mandip J. Sibakoti
, Sreejith Karthikeyan
, Sehyun Hwang
, Timothy Bontrager
, Stephen A. Campbell

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The saturation of V_OC at larger band gaps in Cu(In, Ga)Se₂ devices presents a major challenge in developing high efficiency solar devices for tandem solar applications. Although recent studies have shown that recombination at the buffer/absorber interface dominates in high Ga samples with wide band gaps, the interface parameters are not well understood to accurately model the device behavior. In this work we have applied temperature dependent CV and DLCP methods to estimate the interface state density along the bandgap in CIGS and CIAGS based solar devices. We have also used DLTS to study the nature of deep levels in CIGS and CIAGS devices. Based on our analysis and device simulation results, we attribute the V_OC saturation in wide gap CIAGS devices to increased recombination rate at the interface.

Original language	English
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1163-1168
Number of pages	6
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366517
Publication status	Published - 2017
Externally published	Yes
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: Jun 25 2017 → Jun 30 2017

Publication series

Name	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Conference

Conference	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	6/25/17 → 6/30/17

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

CIAGS
CIGS
DLCP
DLTS
Electrical Characterization
SCAPS modeling
Wide band-gap solar cells

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2017.8366517

Cite this

Sibakoti, M. J., Karthikeyan, S., Hwang, S., Bontrager, T., & Campbell, S. A. (2017). Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1163-1168). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366517

Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells. / Sibakoti, Mandip J.; Karthikeyan, Sreejith; Hwang, Sehyun et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1163-1168 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sibakoti, MJ, Karthikeyan, S, Hwang, S, Bontrager, T & Campbell, SA 2017, Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 1163-1168, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 6/25/17. https://doi.org/10.1109/PVSC.2017.8366517

Sibakoti MJ, Karthikeyan S, Hwang S, Bontrager T, Campbell SA. Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. 1163-1168. (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). doi: 10.1109/PVSC.2017.8366517

Sibakoti, Mandip J. ; Karthikeyan, Sreejith ; Hwang, Sehyun et al. / Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 1163-1168 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

@inproceedings{a57f69a7d12b4d08aef6e806ebee892c,

title = "Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells",

abstract = "The saturation of VOC at larger band gaps in Cu(In, Ga)Se2 devices presents a major challenge in developing high efficiency solar devices for tandem solar applications. Although recent studies have shown that recombination at the buffer/absorber interface dominates in high Ga samples with wide band gaps, the interface parameters are not well understood to accurately model the device behavior. In this work we have applied temperature dependent CV and DLCP methods to estimate the interface state density along the bandgap in CIGS and CIAGS based solar devices. We have also used DLTS to study the nature of deep levels in CIGS and CIAGS devices. Based on our analysis and device simulation results, we attribute the VOC saturation in wide gap CIAGS devices to increased recombination rate at the interface.",

keywords = "CIAGS, CIGS, DLCP, DLTS, Electrical Characterization, SCAPS modeling, Wide band-gap solar cells",

author = "Sibakoti, \{Mandip J.\} and Sreejith Karthikeyan and Sehyun Hwang and Timothy Bontrager and Campbell, \{Stephen A.\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

doi = "10.1109/PVSC.2017.8366517",

language = "English",

series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "1163--1168",

booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

}

TY - GEN

T1 - Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells

AU - Sibakoti, Mandip J.

AU - Karthikeyan, Sreejith

AU - Hwang, Sehyun

AU - Bontrager, Timothy

AU - Campbell, Stephen A.

PY - 2017

Y1 - 2017

N2 - The saturation of VOC at larger band gaps in Cu(In, Ga)Se2 devices presents a major challenge in developing high efficiency solar devices for tandem solar applications. Although recent studies have shown that recombination at the buffer/absorber interface dominates in high Ga samples with wide band gaps, the interface parameters are not well understood to accurately model the device behavior. In this work we have applied temperature dependent CV and DLCP methods to estimate the interface state density along the bandgap in CIGS and CIAGS based solar devices. We have also used DLTS to study the nature of deep levels in CIGS and CIAGS devices. Based on our analysis and device simulation results, we attribute the VOC saturation in wide gap CIAGS devices to increased recombination rate at the interface.

AB - The saturation of VOC at larger band gaps in Cu(In, Ga)Se2 devices presents a major challenge in developing high efficiency solar devices for tandem solar applications. Although recent studies have shown that recombination at the buffer/absorber interface dominates in high Ga samples with wide band gaps, the interface parameters are not well understood to accurately model the device behavior. In this work we have applied temperature dependent CV and DLCP methods to estimate the interface state density along the bandgap in CIGS and CIAGS based solar devices. We have also used DLTS to study the nature of deep levels in CIGS and CIAGS devices. Based on our analysis and device simulation results, we attribute the VOC saturation in wide gap CIAGS devices to increased recombination rate at the interface.

KW - CIAGS

KW - CIGS

KW - DLCP

KW - DLTS

KW - Electrical Characterization

KW - SCAPS modeling

KW - Wide band-gap solar cells

UR - https://www.scopus.com/pages/publications/85048514882

UR - https://www.scopus.com/pages/publications/85048514882#tab=citedBy

U2 - 10.1109/PVSC.2017.8366517

DO - 10.1109/PVSC.2017.8366517

M3 - Conference contribution

AN - SCOPUS:85048514882

T3 - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

SP - 1163

EP - 1168

BT - 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 44th IEEE Photovoltaic Specialist Conference, PVSC 2017

Y2 - 25 June 2017 through 30 June 2017

ER -

Bulk and interface characterization and modeling of copper indium aluminum gallium selenide (CIAGS) solar cells

Abstract

Publication series

Conference

UN SDGs

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this