Capacitance-voltage characteristics of In0.3Ge2Sb2Te5 thin films

S. T. Mahmoud; H. Ghamlouche; N. Qamhieh; Sadiqa Ahmed

doi:10.1016/j.jnoncrysol.2007.11.014

Capacitance-voltage characteristics of In_0.3Ge₂Sb₂Te₅ thin films

S. T. Mahmoud, H. Ghamlouche, N. Qamhieh, Sadiqa Ahmed

Department of Physics

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

The influence of indium doping on the capacitance variation with temperature and applied bias voltage of Ge₂Sb₂Te₅ is investigated. The capacitance-voltage (C-V) measurements of In_0.3Ge₂Sb₂Te₅ and Ge₂Sb₂Te₅ thin films were performed for a sweep of voltages from -20 to +20 V at different temperatures. The results show different capacitance behavior of In_0.3Ge₂Sb₂Te₅ and Ge₂Sb₂Te₅ films. As the temperature increases the capacitance of the indium-doped sample decreases and becomes negative. The negative capacitance effect might be attributed to a significant increase of the film's conductivity due to temperature and applied bias voltage. The nonlinearity in the capacitance and conductivity could be related to the nucleation mechanism as the temperature becomes close to the amorphous-crystalline transition temperature.

Original language	English
Pages (from-to)	1976-1980
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	354
Issue number	18
DOIs	https://doi.org/10.1016/j.jnoncrysol.2007.11.014
Publication status	Published - Apr 15 2008

Keywords

Alloys
Amorphous semiconductors
Chalcogenides
Crystallization
Electrical and electronic properties
Films and coatings
Glass transition

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

Access to Document

10.1016/j.jnoncrysol.2007.11.014

Cite this

@article{2df99d8e7ac84293ab193c21dd9c4c6a,

title = "Capacitance-voltage characteristics of In0.3Ge2Sb2Te5 thin films",

abstract = "The influence of indium doping on the capacitance variation with temperature and applied bias voltage of Ge2Sb2Te5 is investigated. The capacitance-voltage (C-V) measurements of In0.3Ge2Sb2Te5 and Ge2Sb2Te5 thin films were performed for a sweep of voltages from -20 to +20 V at different temperatures. The results show different capacitance behavior of In0.3Ge2Sb2Te5 and Ge2Sb2Te5 films. As the temperature increases the capacitance of the indium-doped sample decreases and becomes negative. The negative capacitance effect might be attributed to a significant increase of the film's conductivity due to temperature and applied bias voltage. The nonlinearity in the capacitance and conductivity could be related to the nucleation mechanism as the temperature becomes close to the amorphous-crystalline transition temperature.",

keywords = "Alloys, Amorphous semiconductors, Chalcogenides, Crystallization, Electrical and electronic properties, Films and coatings, Glass transition",

author = "Mahmoud, {S. T.} and H. Ghamlouche and N. Qamhieh and Sadiqa Ahmed",

note = "Funding Information: This work is funded by the Research Affairs Unit at the United Arab Emirates University, (Grant # 02-02-2-11/07).",

year = "2008",

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day = "15",

doi = "10.1016/j.jnoncrysol.2007.11.014",

language = "English",

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TY - JOUR

T1 - Capacitance-voltage characteristics of In0.3Ge2Sb2Te5 thin films

AU - Mahmoud, S. T.

AU - Ghamlouche, H.

AU - Qamhieh, N.

AU - Ahmed, Sadiqa

N1 - Funding Information: This work is funded by the Research Affairs Unit at the United Arab Emirates University, (Grant # 02-02-2-11/07).

PY - 2008/4/15

Y1 - 2008/4/15

N2 - The influence of indium doping on the capacitance variation with temperature and applied bias voltage of Ge2Sb2Te5 is investigated. The capacitance-voltage (C-V) measurements of In0.3Ge2Sb2Te5 and Ge2Sb2Te5 thin films were performed for a sweep of voltages from -20 to +20 V at different temperatures. The results show different capacitance behavior of In0.3Ge2Sb2Te5 and Ge2Sb2Te5 films. As the temperature increases the capacitance of the indium-doped sample decreases and becomes negative. The negative capacitance effect might be attributed to a significant increase of the film's conductivity due to temperature and applied bias voltage. The nonlinearity in the capacitance and conductivity could be related to the nucleation mechanism as the temperature becomes close to the amorphous-crystalline transition temperature.

AB - The influence of indium doping on the capacitance variation with temperature and applied bias voltage of Ge2Sb2Te5 is investigated. The capacitance-voltage (C-V) measurements of In0.3Ge2Sb2Te5 and Ge2Sb2Te5 thin films were performed for a sweep of voltages from -20 to +20 V at different temperatures. The results show different capacitance behavior of In0.3Ge2Sb2Te5 and Ge2Sb2Te5 films. As the temperature increases the capacitance of the indium-doped sample decreases and becomes negative. The negative capacitance effect might be attributed to a significant increase of the film's conductivity due to temperature and applied bias voltage. The nonlinearity in the capacitance and conductivity could be related to the nucleation mechanism as the temperature becomes close to the amorphous-crystalline transition temperature.

KW - Alloys

KW - Amorphous semiconductors

KW - Chalcogenides

KW - Crystallization

KW - Electrical and electronic properties

KW - Films and coatings

KW - Glass transition

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U2 - 10.1016/j.jnoncrysol.2007.11.014

DO - 10.1016/j.jnoncrysol.2007.11.014

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VL - 354

SP - 1976

EP - 1980

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

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