Comparison between electrical properties and electronic structure of variously-prepared germanium selenide films

G. J. Adriaenssens; A. Gheorghiu; C. Sénémaud; N. Qamhieh; N. Bollé; E. Sleeckx; P. Nagels

doi:10.1016/0022-3093(96)00003-8

Comparison between electrical properties and electronic structure of variously-prepared germanium selenide films

G. J. Adriaenssens, A. Gheorghiu, C. Sénémaud, N. Qamhieh, N. Bollé, E. Sleeckx, P. Nagels

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Electronic structure and properties have been compared for amorphous germanium selenide films with compositions near GeSe₂ to GeSe₃, and prepared by either plasma-enhanced chemical vapour deposition (PECVD) of GeH₄ and H₂Se mixtures, or by thermal evaporation of bulk germanium selenide compounds. X-ray photoelectron spectroscopy (XPS) is used in conjunction with photo-and dark conductivity measurements. XPS spectra from Ge 3d and Se 3d core levels, and of the valence band, reveal no significant difference in electronic structure, but the electrical measurements point to a different position of the Fermi level in the two types of material. It is suggested that PECVD produces a distribution of localized gap states which pushes the Fermi level closer to the transport band.

Original language	English
Pages (from-to)	675-679
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	198-200
Issue number	PART 2
DOIs	https://doi.org/10.1016/0022-3093(96)00003-8
Publication status	Published - May 1996
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(96)00003-8

Cite this

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title = "Comparison between electrical properties and electronic structure of variously-prepared germanium selenide films",

abstract = "Electronic structure and properties have been compared for amorphous germanium selenide films with compositions near GeSe2 to GeSe3, and prepared by either plasma-enhanced chemical vapour deposition (PECVD) of GeH4 and H2Se mixtures, or by thermal evaporation of bulk germanium selenide compounds. X-ray photoelectron spectroscopy (XPS) is used in conjunction with photo-and dark conductivity measurements. XPS spectra from Ge 3d and Se 3d core levels, and of the valence band, reveal no significant difference in electronic structure, but the electrical measurements point to a different position of the Fermi level in the two types of material. It is suggested that PECVD produces a distribution of localized gap states which pushes the Fermi level closer to the transport band.",

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T1 - Comparison between electrical properties and electronic structure of variously-prepared germanium selenide films

AU - Adriaenssens, G. J.

AU - Gheorghiu, A.

AU - Sénémaud, C.

AU - Qamhieh, N.

AU - Bollé, N.

AU - Sleeckx, E.

AU - Nagels, P.

PY - 1996/5

Y1 - 1996/5

N2 - Electronic structure and properties have been compared for amorphous germanium selenide films with compositions near GeSe2 to GeSe3, and prepared by either plasma-enhanced chemical vapour deposition (PECVD) of GeH4 and H2Se mixtures, or by thermal evaporation of bulk germanium selenide compounds. X-ray photoelectron spectroscopy (XPS) is used in conjunction with photo-and dark conductivity measurements. XPS spectra from Ge 3d and Se 3d core levels, and of the valence band, reveal no significant difference in electronic structure, but the electrical measurements point to a different position of the Fermi level in the two types of material. It is suggested that PECVD produces a distribution of localized gap states which pushes the Fermi level closer to the transport band.

AB - Electronic structure and properties have been compared for amorphous germanium selenide films with compositions near GeSe2 to GeSe3, and prepared by either plasma-enhanced chemical vapour deposition (PECVD) of GeH4 and H2Se mixtures, or by thermal evaporation of bulk germanium selenide compounds. X-ray photoelectron spectroscopy (XPS) is used in conjunction with photo-and dark conductivity measurements. XPS spectra from Ge 3d and Se 3d core levels, and of the valence band, reveal no significant difference in electronic structure, but the electrical measurements point to a different position of the Fermi level in the two types of material. It is suggested that PECVD produces a distribution of localized gap states which pushes the Fermi level closer to the transport band.

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Comparison between electrical properties and electronic structure of variously-prepared germanium selenide films

Abstract

ASJC Scopus subject areas

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