TY - JOUR
T1 - Computing topological indices of 2-dimensional silicon-carbons
AU - Naeem, Muhammad
AU - Siddiqui, Muhammad Kamran
AU - Qaisar, Shahid
AU - Imran, Muhammad
AU - Farahani, Muhammad Reza
N1 - Publisher Copyright:
© 2018, Politechnica University of Bucharest. All rights reserved.
PY - 2018
Y1 - 2018
N2 - The applications of graph theory in chemistry and in the study of molecule structures are important, and lately, it has increased exponentially. Molecular graphs have points (vertices) representing atoms (regardless of type) and lines (edges) that represents chemical bonds (regardless of type) between atoms. In this article, we study the molecular graph of (2D) siliconcarbon Si2C3-III and SiC3-III. Moreover, we have computed and gave close formulas of degree based additive topological indices mainly first and second Zagreb index, general Randić, atom bond connectivity index(ABC), geometric arithmetic index(GA), fourth atom bond connectivity and fifth GAindex of Si2C3-III and SiC3-III.
AB - The applications of graph theory in chemistry and in the study of molecule structures are important, and lately, it has increased exponentially. Molecular graphs have points (vertices) representing atoms (regardless of type) and lines (edges) that represents chemical bonds (regardless of type) between atoms. In this article, we study the molecular graph of (2D) siliconcarbon Si2C3-III and SiC3-III. Moreover, we have computed and gave close formulas of degree based additive topological indices mainly first and second Zagreb index, general Randić, atom bond connectivity index(ABC), geometric arithmetic index(GA), fourth atom bond connectivity and fifth GAindex of Si2C3-III and SiC3-III.
KW - (2D) silicon-carbon SiC-III and SiC-III
KW - ABC
KW - ABC
KW - GA
KW - GAindex
KW - General randić index
KW - Topological indices
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M3 - Article
AN - SCOPUS:85058946817
SN - 1454-2331
VL - 80
SP - 115
EP - 136
JO - UPB Scientific Bulletin, Series B: Chemistry and Materials Science
JF - UPB Scientific Bulletin, Series B: Chemistry and Materials Science
IS - 4
ER -