Concurrent synthesis and boron-doping of amorphous carbon films by focused ion beam-assisted chemical vapor deposition

Ryo Matsumoto; El Hadi S. Sadki; Hiromi Tanaka; Sayaka Yamamoto; Shintaro Adachi; Adnan Younis; Hiroyuki Takeya; Yoshihiko Takano

doi:10.1016/j.tsf.2021.138704

Concurrent synthesis and boron-doping of amorphous carbon films by focused ion beam-assisted chemical vapor deposition

Ryo Matsumoto
, El Hadi S. Sadki
, Hiromi Tanaka
, Sayaka Yamamoto
, Shintaro Adachi
, Adnan Younis
, Hiroyuki Takeya
, Yoshihiko Takano

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Amethod to directly deposit boron-doped amorphous carbon films via focused ion beam-assisted chemical vapor deposition is reported. The presence of boron in the deposited films was verified by X-ray photoelectron spectroscopy. Raman spectroscopy analysis confirmed the amorphousity of the films. The as-deposited films exhibited typical semiconducting behavior from electrical resistance versus temperature measurements. The presented fabrication technique is a one step process for the simultaneous deposition, boron-doping, and patterning of the films, and hence may offer an effective way to directly fabricate boron-doped amorphous carbon-based devices without the need for templates, which is highly advantageous for applications.

Original language	English
Article number	138704
Journal	Thin Solid Films
Volume	730
DOIs	https://doi.org/10.1016/j.tsf.2021.138704
Publication status	Published - Jul 31 2021

Keywords

Amorphous carbon film
Boron doping
Chemical vapor deposition
Focused ion beam

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2021.138704

Cite this

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title = "Concurrent synthesis and boron-doping of amorphous carbon films by focused ion beam-assisted chemical vapor deposition",

abstract = "Amethod to directly deposit boron-doped amorphous carbon films via focused ion beam-assisted chemical vapor deposition is reported. The presence of boron in the deposited films was verified by X-ray photoelectron spectroscopy. Raman spectroscopy analysis confirmed the amorphousity of the films. The as-deposited films exhibited typical semiconducting behavior from electrical resistance versus temperature measurements. The presented fabrication technique is a one step process for the simultaneous deposition, boron-doping, and patterning of the films, and hence may offer an effective way to directly fabricate boron-doped amorphous carbon-based devices without the need for templates, which is highly advantageous for applications.",

keywords = "Amorphous carbon film, Boron doping, Chemical vapor deposition, Focused ion beam",

author = "Ryo Matsumoto and Sadki, \{El Hadi S.\} and Hiromi Tanaka and Sayaka Yamamoto and Shintaro Adachi and Adnan Younis and Hiroyuki Takeya and Yoshihiko Takano",

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doi = "10.1016/j.tsf.2021.138704",

language = "English",

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TY - JOUR

T1 - Concurrent synthesis and boron-doping of amorphous carbon films by focused ion beam-assisted chemical vapor deposition

AU - Matsumoto, Ryo

AU - Sadki, El Hadi S.

AU - Tanaka, Hiromi

AU - Yamamoto, Sayaka

AU - Adachi, Shintaro

AU - Younis, Adnan

AU - Takeya, Hiroyuki

AU - Takano, Yoshihiko

PY - 2021/7/31

Y1 - 2021/7/31

N2 - Amethod to directly deposit boron-doped amorphous carbon films via focused ion beam-assisted chemical vapor deposition is reported. The presence of boron in the deposited films was verified by X-ray photoelectron spectroscopy. Raman spectroscopy analysis confirmed the amorphousity of the films. The as-deposited films exhibited typical semiconducting behavior from electrical resistance versus temperature measurements. The presented fabrication technique is a one step process for the simultaneous deposition, boron-doping, and patterning of the films, and hence may offer an effective way to directly fabricate boron-doped amorphous carbon-based devices without the need for templates, which is highly advantageous for applications.

AB - Amethod to directly deposit boron-doped amorphous carbon films via focused ion beam-assisted chemical vapor deposition is reported. The presence of boron in the deposited films was verified by X-ray photoelectron spectroscopy. Raman spectroscopy analysis confirmed the amorphousity of the films. The as-deposited films exhibited typical semiconducting behavior from electrical resistance versus temperature measurements. The presented fabrication technique is a one step process for the simultaneous deposition, boron-doping, and patterning of the films, and hence may offer an effective way to directly fabricate boron-doped amorphous carbon-based devices without the need for templates, which is highly advantageous for applications.

KW - Amorphous carbon film

KW - Boron doping

KW - Chemical vapor deposition

KW - Focused ion beam

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UR - https://www.scopus.com/pages/publications/85105525510#tab=citedBy

U2 - 10.1016/j.tsf.2021.138704

DO - 10.1016/j.tsf.2021.138704

M3 - Article

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VL - 730

JO - Thin Solid Films

JF - Thin Solid Films

M1 - 138704

ER -

Concurrent synthesis and boron-doping of amorphous carbon films by focused ion beam-assisted chemical vapor deposition

Abstract

Keywords

ASJC Scopus subject areas

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