Conduction band edges charge densities in CdxZn1-xS

A. Mahmoudi; B. Soudini; N. Amrane; B. Khelifa; H. Aourag

doi:10.1016/0927-0256(94)90102-3

Conduction band edges charge densities in Cd_xZn_1-xS

A. Mahmoudi, B. Soudini, N. Amrane, B. Khelifa, H. Aourag

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The empirical pseudopotential method coupled with the virtual crystal approximation is used to compute the electronic conduction band-edge charge densities at the Γ and X points for the ternary alloy Cd_xZn_1-xS. We find that these charge densities are strongly dependent upon the stochiometric coefficient x. Such differences are crucial for a comprehensive understanding of interstitial impurities and the response of specific band states to perturbation in ternary alloy semiconductors.

Original language	English
Pages (from-to)	213-220
Number of pages	8
Journal	Computational Materials Science
Volume	2
Issue number	2
DOIs	https://doi.org/10.1016/0927-0256(94)90102-3
Publication status	Published - Mar 1994
Externally published	Yes

ASJC Scopus subject areas

Computer Science(all)
Chemistry(all)
Materials Science(all)
Mechanics of Materials
Physics and Astronomy(all)
Computational Mathematics

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10.1016/0927-0256(94)90102-3

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@article{01614adeb08d4cfc8cfe1359d5da606a,

title = "Conduction band edges charge densities in CdxZn1-xS",

abstract = "The empirical pseudopotential method coupled with the virtual crystal approximation is used to compute the electronic conduction band-edge charge densities at the Γ and X points for the ternary alloy CdxZn1-xS. We find that these charge densities are strongly dependent upon the stochiometric coefficient x. Such differences are crucial for a comprehensive understanding of interstitial impurities and the response of specific band states to perturbation in ternary alloy semiconductors.",

author = "A. Mahmoudi and B. Soudini and N. Amrane and B. Khelifa and H. Aourag",

year = "1994",

month = mar,

doi = "10.1016/0927-0256(94)90102-3",

language = "English",

volume = "2",

pages = "213--220",

journal = "Computational Materials Science",

issn = "0927-0256",

publisher = "Elsevier",

number = "2",

}

TY - JOUR

T1 - Conduction band edges charge densities in CdxZn1-xS

AU - Mahmoudi, A.

AU - Soudini, B.

AU - Amrane, N.

AU - Khelifa, B.

AU - Aourag, H.

PY - 1994/3

Y1 - 1994/3

N2 - The empirical pseudopotential method coupled with the virtual crystal approximation is used to compute the electronic conduction band-edge charge densities at the Γ and X points for the ternary alloy CdxZn1-xS. We find that these charge densities are strongly dependent upon the stochiometric coefficient x. Such differences are crucial for a comprehensive understanding of interstitial impurities and the response of specific band states to perturbation in ternary alloy semiconductors.

AB - The empirical pseudopotential method coupled with the virtual crystal approximation is used to compute the electronic conduction band-edge charge densities at the Γ and X points for the ternary alloy CdxZn1-xS. We find that these charge densities are strongly dependent upon the stochiometric coefficient x. Such differences are crucial for a comprehensive understanding of interstitial impurities and the response of specific band states to perturbation in ternary alloy semiconductors.

UR - http://www.scopus.com/inward/record.url?scp=0028397256&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028397256&partnerID=8YFLogxK

U2 - 10.1016/0927-0256(94)90102-3

DO - 10.1016/0927-0256(94)90102-3

M3 - Article

AN - SCOPUS:0028397256

SN - 0927-0256

VL - 2

SP - 213

EP - 220

JO - Computational Materials Science

JF - Computational Materials Science

IS - 2

ER -

Conduction band edges charge densities in Cd_xZn_1-xS

Abstract

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