Abstract
The variation of the direct and indirect band gap of GaP and AlP has been calculated using the adjusted empirical pseudopotential method. The gap varies sublinearly with pressure but linearly with lattice constant. These results are discussed in the light of experimental results. The direct band gap increases with increasing pressure, whereas the indirect gap decreases. The effect of high pressure is correlated with the effect of alloying in GaxAl1 - xP.
Original language | English |
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Pages (from-to) | 180-184 |
Number of pages | 5 |
Journal | Materials Chemistry & Physics |
Volume | 39 |
Issue number | 3 |
DOIs | |
Publication status | Published - Jan 15 1995 |
Externally published | Yes |
Keywords
- Alloying
- Aluminium phosphide
- Band gaps
- Gallium phosphide
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics