Cu2ZnSnS4 thin film growth optimization and post rapid thermal annealing of solar cells and its influence on device performance

Liyuan Zhang; Sreejith Karthikeyan; Mandip J. Sibakoti; Stephen A. Campbell

doi:10.1109/PVSC.2015.7355771

Cu2ZnSnS4 thin film growth optimization and post rapid thermal annealing of solar cells and its influence on device performance

Liyuan Zhang
, Sreejith Karthikeyan
, Mandip J. Sibakoti
, Stephen A. Campbell

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

We investigated the synthesis of kesterite Cu2ZnSnS4 (CZTS) thin films using thermal evaporation from copper (Cu), zinc (Zn) and tin (Sn) pellets and post-annealing in a sulfur atmosphere. Two different metal precursor stacking orders (Cu/Sn/Zn/Cu and Cu/Sn/Cu/Zn) have been tested and experimental results prove that a layer of Cu on the top provides higher compositional uniformity and fewer secondary phases. CZTS thin films produced by a Cu/Sn/Zn/Cu precursor stacking order was used to study post rapid thermal annealing (RTA) influence on solar cell performance. The best performing solar cell using the CZTS thin film mentioned above with composition ratio Cu/(Zn+Sn) = 0.82, and Zn/Sn = 1.35 exhibited an open-circuit voltage of 433 mV, a short-circuit current of 7.78 mA/cm2, a fill factor of 46.23 % and a conversion efficiency of 1.56 %. Post RTA was conducted and an increase of device performance was observed. The solar cell which shows 1.56 % at room temperature shows 2.72 % efficiency after RTA at 350 °C for 30 seconds. The cell performance improvement mechanism was studied.

Original language	English
Title of host publication	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479979448
DOIs	https://doi.org/10.1109/PVSC.2015.7355771
Publication status	Published - Dec 14 2015
Externally published	Yes
Event	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015 - New Orleans, United States Duration: Jun 14 2015 → Jun 19 2015

Publication series

Name	2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015

Conference

Conference	42nd IEEE Photovoltaic Specialist Conference, PVSC 2015
Country/Territory	United States
City	New Orleans
Period	6/14/15 → 6/19/15

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Cu2ZnSnS4
interfacial defect concentration
photovoltaic cells
rapid thermal annealing

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/PVSC.2015.7355771

Cite this

Zhang, L., Karthikeyan, S., Sibakoti, M. J., & Campbell, S. A. (2015). Cu2ZnSnS4 thin film growth optimization and post rapid thermal annealing of solar cells and its influence on device performance. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015 Article 7355771 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2015.7355771

Cu2ZnSnS4 thin film growth optimization and post rapid thermal annealing of solar cells and its influence on device performance. / Zhang, Liyuan; Karthikeyan, Sreejith; Sibakoti, Mandip J. et al.
2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. 7355771 (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zhang, L, Karthikeyan, S, Sibakoti, MJ & Campbell, SA 2015, Cu2ZnSnS4 thin film growth optimization and post rapid thermal annealing of solar cells and its influence on device performance. in 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015., 7355771, 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015, Institute of Electrical and Electronics Engineers Inc., 42nd IEEE Photovoltaic Specialist Conference, PVSC 2015, New Orleans, United States, 6/14/15. https://doi.org/10.1109/PVSC.2015.7355771

Zhang L, Karthikeyan S, Sibakoti MJ, Campbell SA. Cu2ZnSnS4 thin film growth optimization and post rapid thermal annealing of solar cells and its influence on device performance. In 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc. 2015. 7355771. (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015). doi: 10.1109/PVSC.2015.7355771

Zhang, Liyuan ; Karthikeyan, Sreejith ; Sibakoti, Mandip J. et al. / Cu2ZnSnS4 thin film growth optimization and post rapid thermal annealing of solar cells and its influence on device performance. 2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015. Institute of Electrical and Electronics Engineers Inc., 2015. (2015 IEEE 42nd Photovoltaic Specialist Conference, PVSC 2015).

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title = "Cu2ZnSnS4 thin film growth optimization and post rapid thermal annealing of solar cells and its influence on device performance",

abstract = "We investigated the synthesis of kesterite Cu2ZnSnS4 (CZTS) thin films using thermal evaporation from copper (Cu), zinc (Zn) and tin (Sn) pellets and post-annealing in a sulfur atmosphere. Two different metal precursor stacking orders (Cu/Sn/Zn/Cu and Cu/Sn/Cu/Zn) have been tested and experimental results prove that a layer of Cu on the top provides higher compositional uniformity and fewer secondary phases. CZTS thin films produced by a Cu/Sn/Zn/Cu precursor stacking order was used to study post rapid thermal annealing (RTA) influence on solar cell performance. The best performing solar cell using the CZTS thin film mentioned above with composition ratio Cu/(Zn+Sn) = 0.82, and Zn/Sn = 1.35 exhibited an open-circuit voltage of 433 mV, a short-circuit current of 7.78 mA/cm2, a fill factor of 46.23 \% and a conversion efficiency of 1.56 \%. Post RTA was conducted and an increase of device performance was observed. The solar cell which shows 1.56 \% at room temperature shows 2.72 \% efficiency after RTA at 350 °C for 30 seconds. The cell performance improvement mechanism was studied.",

keywords = "Cu2ZnSnS4, interfacial defect concentration, photovoltaic cells, rapid thermal annealing",

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AB - We investigated the synthesis of kesterite Cu2ZnSnS4 (CZTS) thin films using thermal evaporation from copper (Cu), zinc (Zn) and tin (Sn) pellets and post-annealing in a sulfur atmosphere. Two different metal precursor stacking orders (Cu/Sn/Zn/Cu and Cu/Sn/Cu/Zn) have been tested and experimental results prove that a layer of Cu on the top provides higher compositional uniformity and fewer secondary phases. CZTS thin films produced by a Cu/Sn/Zn/Cu precursor stacking order was used to study post rapid thermal annealing (RTA) influence on solar cell performance. The best performing solar cell using the CZTS thin film mentioned above with composition ratio Cu/(Zn+Sn) = 0.82, and Zn/Sn = 1.35 exhibited an open-circuit voltage of 433 mV, a short-circuit current of 7.78 mA/cm2, a fill factor of 46.23 % and a conversion efficiency of 1.56 %. Post RTA was conducted and an increase of device performance was observed. The solar cell which shows 1.56 % at room temperature shows 2.72 % efficiency after RTA at 350 °C for 30 seconds. The cell performance improvement mechanism was studied.

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KW - rapid thermal annealing

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Cu2ZnSnS4 thin film growth optimization and post rapid thermal annealing of solar cells and its influence on device performance

Abstract

Publication series

Conference

UN SDGs

Keywords

ASJC Scopus subject areas

Access to Document

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