Abstract
Observations were made on defect levels and charge carrier photogeneration in amorphous selenium (Se) layers. Time-of-flight post transit data that suggested positions in band gap for thermally accessible levels of the intrinsic negative-U centers of a-Se was reexamined. The ensuing processes of bimolecular recombination and deep trapping led to a good description of experimentally observed photogeneration efficiency in a-Se.
Original language | English |
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Pages (from-to) | 215-219 |
Number of pages | 5 |
Journal | Journal of Non-Crystalline Solids |
Volume | 326-327 |
DOIs | |
Publication status | Published - Oct 1 2003 |
Event | 13th. International Symposium on Non-Oxide Glasses and New Optical Materials (ISNOG 13) - Pardubice, Czech Republic Duration: Sept 9 2002 → Sept 13 2002 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry