Defect levels and charge carrier photogeneration in amorphous selenium layers

E. V. Emelianova; N. Qamhieh; M. Brinza; G. J. Adriaenssens; S. O. Kasap; R. E. Johanson; V. I. Arkhipov

doi:10.1016/S0022-3093(03)00426-5

Defect levels and charge carrier photogeneration in amorphous selenium layers

E. V. Emelianova, N. Qamhieh, M. Brinza, G. J. Adriaenssens, S. O. Kasap, R. E. Johanson, V. I. Arkhipov

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

Observations were made on defect levels and charge carrier photogeneration in amorphous selenium (Se) layers. Time-of-flight post transit data that suggested positions in band gap for thermally accessible levels of the intrinsic negative-U centers of a-Se was reexamined. The ensuing processes of bimolecular recombination and deep trapping led to a good description of experimentally observed photogeneration efficiency in a-Se.

Original language	English
Pages (from-to)	215-219
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	326-327
DOIs	https://doi.org/10.1016/S0022-3093(03)00426-5
Publication status	Published - Oct 1 2003
Event	13th. International Symposium on Non-Oxide Glasses and New Optical Materials (ISNOG 13) - Pardubice, Czech Republic Duration: Sept 9 2002 → Sept 13 2002

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/S0022-3093(03)00426-5

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title = "Defect levels and charge carrier photogeneration in amorphous selenium layers",

abstract = "Observations were made on defect levels and charge carrier photogeneration in amorphous selenium (Se) layers. Time-of-flight post transit data that suggested positions in band gap for thermally accessible levels of the intrinsic negative-U centers of a-Se was reexamined. The ensuing processes of bimolecular recombination and deep trapping led to a good description of experimentally observed photogeneration efficiency in a-Se.",

author = "Emelianova, {E. V.} and N. Qamhieh and M. Brinza and Adriaenssens, {G. J.} and Kasap, {S. O.} and Johanson, {R. E.} and Arkhipov, {V. I.}",

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TY - JOUR

T1 - Defect levels and charge carrier photogeneration in amorphous selenium layers

AU - Emelianova, E. V.

AU - Qamhieh, N.

AU - Brinza, M.

AU - Adriaenssens, G. J.

AU - Kasap, S. O.

AU - Johanson, R. E.

AU - Arkhipov, V. I.

PY - 2003/10/1

Y1 - 2003/10/1

N2 - Observations were made on defect levels and charge carrier photogeneration in amorphous selenium (Se) layers. Time-of-flight post transit data that suggested positions in band gap for thermally accessible levels of the intrinsic negative-U centers of a-Se was reexamined. The ensuing processes of bimolecular recombination and deep trapping led to a good description of experimentally observed photogeneration efficiency in a-Se.

AB - Observations were made on defect levels and charge carrier photogeneration in amorphous selenium (Se) layers. Time-of-flight post transit data that suggested positions in band gap for thermally accessible levels of the intrinsic negative-U centers of a-Se was reexamined. The ensuing processes of bimolecular recombination and deep trapping led to a good description of experimentally observed photogeneration efficiency in a-Se.

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U2 - 10.1016/S0022-3093(03)00426-5

DO - 10.1016/S0022-3093(03)00426-5

M3 - Conference article

AN - SCOPUS:0041326728

SN - 0022-3093

VL - 326-327

SP - 215

EP - 219

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

T2 - 13th. International Symposium on Non-Oxide Glasses and New Optical Materials (ISNOG 13)

Y2 - 9 September 2002 through 13 September 2002

ER -

Defect levels and charge carrier photogeneration in amorphous selenium layers

Abstract

ASJC Scopus subject areas

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