Defect levels and charge carrier photogeneration in amorphous selenium layers

E. V. Emelianova; N. Qamhieh; M. Brinza; G. J. Adriaenssens; S. O. Kasap; R. E. Johanson; V. I. Arkhipov

doi:10.1016/S0022-3093(03)00426-5

Defect levels and charge carrier photogeneration in amorphous selenium layers

E. V. Emelianova
, N. Qamhieh
, M. Brinza
, G. J. Adriaenssens
, S. O. Kasap
, R. E. Johanson
, V. I. Arkhipov

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

8 Citations (Scopus)

Abstract

Observations were made on defect levels and charge carrier photogeneration in amorphous selenium (Se) layers. Time-of-flight post transit data that suggested positions in band gap for thermally accessible levels of the intrinsic negative-U centers of a-Se was reexamined. The ensuing processes of bimolecular recombination and deep trapping led to a good description of experimentally observed photogeneration efficiency in a-Se.

Original language	English
Pages (from-to)	215-219
Number of pages	5
Journal	Journal of Non-Crystalline Solids
Volume	326-327
DOIs	https://doi.org/10.1016/S0022-3093(03)00426-5
Publication status	Published - Oct 1 2003
Event	13th. International Symposium on Non-Oxide Glasses and New Optical Materials (ISNOG 13) - Pardubice, Czech Republic Duration: Sept 9 2002 → Sept 13 2002

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/S0022-3093(03)00426-5

Cite this

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title = "Defect levels and charge carrier photogeneration in amorphous selenium layers",

abstract = "Observations were made on defect levels and charge carrier photogeneration in amorphous selenium (Se) layers. Time-of-flight post transit data that suggested positions in band gap for thermally accessible levels of the intrinsic negative-U centers of a-Se was reexamined. The ensuing processes of bimolecular recombination and deep trapping led to a good description of experimentally observed photogeneration efficiency in a-Se.",

author = "Emelianova, \{E. V.\} and N. Qamhieh and M. Brinza and Adriaenssens, \{G. J.\} and Kasap, \{S. O.\} and Johanson, \{R. E.\} and Arkhipov, \{V. I.\}",

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TY - JOUR

T1 - Defect levels and charge carrier photogeneration in amorphous selenium layers

AU - Emelianova, E. V.

AU - Qamhieh, N.

AU - Brinza, M.

AU - Adriaenssens, G. J.

AU - Kasap, S. O.

AU - Johanson, R. E.

AU - Arkhipov, V. I.

PY - 2003/10/1

Y1 - 2003/10/1

N2 - Observations were made on defect levels and charge carrier photogeneration in amorphous selenium (Se) layers. Time-of-flight post transit data that suggested positions in band gap for thermally accessible levels of the intrinsic negative-U centers of a-Se was reexamined. The ensuing processes of bimolecular recombination and deep trapping led to a good description of experimentally observed photogeneration efficiency in a-Se.

AB - Observations were made on defect levels and charge carrier photogeneration in amorphous selenium (Se) layers. Time-of-flight post transit data that suggested positions in band gap for thermally accessible levels of the intrinsic negative-U centers of a-Se was reexamined. The ensuing processes of bimolecular recombination and deep trapping led to a good description of experimentally observed photogeneration efficiency in a-Se.

UR - https://www.scopus.com/pages/publications/0041326728

UR - https://www.scopus.com/pages/publications/0041326728#tab=citedBy

U2 - 10.1016/S0022-3093(03)00426-5

DO - 10.1016/S0022-3093(03)00426-5

M3 - Conference article

AN - SCOPUS:0041326728

SN - 0022-3093

VL - 326-327

SP - 215

EP - 219

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

T2 - 13th. International Symposium on Non-Oxide Glasses and New Optical Materials (ISNOG 13)

Y2 - 9 September 2002 through 13 September 2002

ER -

Defect levels and charge carrier photogeneration in amorphous selenium layers

Abstract

ASJC Scopus subject areas

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