Design of a highly linear 900MHz single ended LNA in 0.35μm CMOS technology

Faiza Zafar; Hifza Abid; Javeria Ahmed; Hashim Raza Khan; Rashad Ramzan; Qamar-ul-Wahab

doi:10.1109/STUDENT.2010.5686993

Design of a highly linear 900MHz single ended LNA in 0.35μm CMOS technology

Faiza Zafar, Hifza Abid, Javeria Ahmed, Hashim Raza Khan, Rashad Ramzan, Qamar-ul-Wahab

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

This work presents the design of a Low Noise Amplifier in 0.35 μm CMOS technology from Taiwan Semiconductors. A single ended cascade configuration with inductive degeneration followed by a common source configuration is used. The circuit is designed in Cadence and employs feedback technique along with the use of a PMOS as a feed forward distortion canceller to further improve linearity. At 900 MHz, the low noise amplifier has a gain of 10.3dB, noise figure of 3.2dB, input referred 1dB-CP of -2.75dBm, output referred 1dB-CP of 6.85dBm, IIP3 of +11.74dBm and OIP3 of +21.76dBm consuming 26mA from 1.5V supply. This design has the best input referred 1dB-CP reported till date in 0.35 μm technology for the desired frequency of operation.

Original language	English
Title of host publication	IEEE Conference on Sustainable Utilization and Development in Engineering and Technology 2010, STUDENT 2010 - Conference Booklet
Pages	127-130
Number of pages	4
DOIs	https://doi.org/10.1109/STUDENT.2010.5686993
Publication status	Published - 2010
Externally published	Yes
Event	IEEE Conference on Sustainable Utilization and Development in Engineering and Technology 2010, STUDENT 2010 - Kuala Lumpur, Malaysia Duration: Nov 20 2010 → Nov 21 2010

Publication series

Name	IEEE Conference on Sustainable Utilization and Development in Engineering and Technology 2010, STUDENT 2010 - Conference Booklet

Other

Other	IEEE Conference on Sustainable Utilization and Development in Engineering and Technology 2010, STUDENT 2010
Country/Territory	Malaysia
City	Kuala Lumpur
Period	11/20/10 → 11/21/10

Keywords

Complementary metal oxide semiconductor (CMOS)
Feed forward distortion cancellation (FDC)
Feedback capacitor
Impedance matching
Low noise amplifier (LNA)

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment

Access to Document

10.1109/STUDENT.2010.5686993

Cite this

Zafar, F., Abid, H., Ahmed, J., Khan, H. R., Ramzan, R., & Qamar-ul-Wahab (2010). Design of a highly linear 900MHz single ended LNA in 0.35μm CMOS technology. In IEEE Conference on Sustainable Utilization and Development in Engineering and Technology 2010, STUDENT 2010 - Conference Booklet (pp. 127-130). Article 5686993 (IEEE Conference on Sustainable Utilization and Development in Engineering and Technology 2010, STUDENT 2010 - Conference Booklet). https://doi.org/10.1109/STUDENT.2010.5686993

Design of a highly linear 900MHz single ended LNA in 0.35μm CMOS technology. / Zafar, Faiza; Abid, Hifza; Ahmed, Javeria et al.
IEEE Conference on Sustainable Utilization and Development in Engineering and Technology 2010, STUDENT 2010 - Conference Booklet. 2010. p. 127-130 5686993 (IEEE Conference on Sustainable Utilization and Development in Engineering and Technology 2010, STUDENT 2010 - Conference Booklet).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Zafar, F, Abid, H, Ahmed, J, Khan, HR, Ramzan, R & Qamar-ul-Wahab 2010, Design of a highly linear 900MHz single ended LNA in 0.35μm CMOS technology. in IEEE Conference on Sustainable Utilization and Development in Engineering and Technology 2010, STUDENT 2010 - Conference Booklet., 5686993, IEEE Conference on Sustainable Utilization and Development in Engineering and Technology 2010, STUDENT 2010 - Conference Booklet, pp. 127-130, IEEE Conference on Sustainable Utilization and Development in Engineering and Technology 2010, STUDENT 2010, Kuala Lumpur, Malaysia, 11/20/10. https://doi.org/10.1109/STUDENT.2010.5686993

Zafar F, Abid H, Ahmed J, Khan HR, Ramzan R, Qamar-ul-Wahab. Design of a highly linear 900MHz single ended LNA in 0.35μm CMOS technology. In IEEE Conference on Sustainable Utilization and Development in Engineering and Technology 2010, STUDENT 2010 - Conference Booklet. 2010. p. 127-130. 5686993. (IEEE Conference on Sustainable Utilization and Development in Engineering and Technology 2010, STUDENT 2010 - Conference Booklet). doi: 10.1109/STUDENT.2010.5686993

Zafar, Faiza ; Abid, Hifza ; Ahmed, Javeria et al. / Design of a highly linear 900MHz single ended LNA in 0.35μm CMOS technology. IEEE Conference on Sustainable Utilization and Development in Engineering and Technology 2010, STUDENT 2010 - Conference Booklet. 2010. pp. 127-130 (IEEE Conference on Sustainable Utilization and Development in Engineering and Technology 2010, STUDENT 2010 - Conference Booklet).

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abstract = "This work presents the design of a Low Noise Amplifier in 0.35 μm CMOS technology from Taiwan Semiconductors. A single ended cascade configuration with inductive degeneration followed by a common source configuration is used. The circuit is designed in Cadence and employs feedback technique along with the use of a PMOS as a feed forward distortion canceller to further improve linearity. At 900 MHz, the low noise amplifier has a gain of 10.3dB, noise figure of 3.2dB, input referred 1dB-CP of -2.75dBm, output referred 1dB-CP of 6.85dBm, IIP3 of +11.74dBm and OIP3 of +21.76dBm consuming 26mA from 1.5V supply. This design has the best input referred 1dB-CP reported till date in 0.35 μm technology for the desired frequency of operation.",

keywords = "Complementary metal oxide semiconductor (CMOS), Feed forward distortion cancellation (FDC), Feedback capacitor, Impedance matching, Low noise amplifier (LNA)",

author = "Faiza Zafar and Hifza Abid and Javeria Ahmed and Khan, {Hashim Raza} and Rashad Ramzan and Qamar-ul-Wahab",

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AU - Zafar, Faiza

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AU - Ahmed, Javeria

AU - Khan, Hashim Raza

AU - Ramzan, Rashad

AU - Qamar-ul-Wahab,

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N2 - This work presents the design of a Low Noise Amplifier in 0.35 μm CMOS technology from Taiwan Semiconductors. A single ended cascade configuration with inductive degeneration followed by a common source configuration is used. The circuit is designed in Cadence and employs feedback technique along with the use of a PMOS as a feed forward distortion canceller to further improve linearity. At 900 MHz, the low noise amplifier has a gain of 10.3dB, noise figure of 3.2dB, input referred 1dB-CP of -2.75dBm, output referred 1dB-CP of 6.85dBm, IIP3 of +11.74dBm and OIP3 of +21.76dBm consuming 26mA from 1.5V supply. This design has the best input referred 1dB-CP reported till date in 0.35 μm technology for the desired frequency of operation.

AB - This work presents the design of a Low Noise Amplifier in 0.35 μm CMOS technology from Taiwan Semiconductors. A single ended cascade configuration with inductive degeneration followed by a common source configuration is used. The circuit is designed in Cadence and employs feedback technique along with the use of a PMOS as a feed forward distortion canceller to further improve linearity. At 900 MHz, the low noise amplifier has a gain of 10.3dB, noise figure of 3.2dB, input referred 1dB-CP of -2.75dBm, output referred 1dB-CP of 6.85dBm, IIP3 of +11.74dBm and OIP3 of +21.76dBm consuming 26mA from 1.5V supply. This design has the best input referred 1dB-CP reported till date in 0.35 μm technology for the desired frequency of operation.

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KW - Feed forward distortion cancellation (FDC)

KW - Feedback capacitor

KW - Impedance matching

KW - Low noise amplifier (LNA)

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Design of a highly linear 900MHz single ended LNA in 0.35μm CMOS technology

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