Detection of optical non-linearities in amorphous semiconductors by caustic crossing in an intensity-modulated laser beam

V. K. Tikhomirov, P. Lievens, N. Qamhieh, G. J. Adriaenssens

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

Optical non-linearities (ONL) have been studied in a-Si:H and a-Se thin films by putting the films in or near the caustic of highly-focused laser beams at sub-band gap energies, while the beam intensity is periodically altered by an electro-optic modulator. In a-Si:H non-linear absorption is seen, together with non-linear refraction of the laser beam at the highest intensities. In the a-Se samples additional, persistent ONL due to structural modifications of the films are observed. They include the appearance of interference fringes and modulation of the reflectance due to the formation of microlenses.

Original languageEnglish
Pages (from-to)119-123
Number of pages5
JournalJournal of Non-Crystalline Solids
Volume198-200
Issue numberPART 1
DOIs
Publication statusPublished - May 1996
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry

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