TY - JOUR
T1 - Device loading effect on nonresonant detection of terahertz radiation in dual grating gate plasmon-resonant structure using InGaP/InGaAs/GaAs material systems
AU - El Moutaouakil, Amine
AU - Suemitsu, Tetsuya
AU - Otsuji, Taiichi
AU - Videlier, Hadley
AU - Boubanga-Tombet, Stephane Albon
AU - Coquillat, Dominique
AU - Knap, Wojciech
PY - 2011/2
Y1 - 2011/2
N2 - We report on nonresonant detection of terahertz radiation using our original InGaP/InGaAs/GaAs plasmon-resonant high-electron-mobility transistor having a dual grating gate (DGG) structure. The experiments were performed at room temperature using a Gunn diode operating at 0.30 THz as the THz source. Using a device-loading model, the intrinsic responsivity was extracted and was dependent on the polarization of the incident THz wave. The device exhibited highest response when the electric-field vector of the incident THz radiation was directed in the source-drain direction. The 2D spatial distribution image of the transistor responsivity shows a clear beam focus centred on the transistor position, which proves the appropriate coupling of the THz radiation to the device, due to the DGG structure. The device also showed a high intrinsic responsivity of ~90 V/W and a noise equivalent power (NEP) as low as ~10-10 WHz-0.5.
AB - We report on nonresonant detection of terahertz radiation using our original InGaP/InGaAs/GaAs plasmon-resonant high-electron-mobility transistor having a dual grating gate (DGG) structure. The experiments were performed at room temperature using a Gunn diode operating at 0.30 THz as the THz source. Using a device-loading model, the intrinsic responsivity was extracted and was dependent on the polarization of the incident THz wave. The device exhibited highest response when the electric-field vector of the incident THz radiation was directed in the source-drain direction. The 2D spatial distribution image of the transistor responsivity shows a clear beam focus centred on the transistor position, which proves the appropriate coupling of the THz radiation to the device, due to the DGG structure. The device also showed a high intrinsic responsivity of ~90 V/W and a noise equivalent power (NEP) as low as ~10-10 WHz-0.5.
KW - Detection
KW - Noise-equivalent power
KW - Responsivity
KW - Terahertz
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U2 - 10.1002/pssc.201000569
DO - 10.1002/pssc.201000569
M3 - Article
AN - SCOPUS:79951712617
SN - 1862-6351
VL - 8
SP - 346
EP - 348
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
IS - 2
ER -