Discrete defect levels in the amorphous selenium bandgap

M. L. Benkhedir, M. Brinza, N. Qamhieh, G. J. Adriaenssens

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


Two discrete defect levels that are distinct from the levels of the standard negative-U model have been located in the a-Se bandgap. One level, situated near the equilibrium Fermi energy level, corresponds to the deep electron trap whose effects on carrier transport have been discussed in the past. It leads to a low-temperature sensitization of the photocurrent. The other defect level is a much more shallow electron trap, some 0.28 eV below the conduction band mobility edge. Its signature is clearly seen in the transient photocurrent after pulsed across-gap excitation.

Original languageEnglish
Pages (from-to)1543-1546
Number of pages4
JournalJournal of Non-Crystalline Solids
Issue number9-20 SPEC. ISS.
Publication statusPublished - Jun 15 2006


  • Amorphous semiconductors
  • Chalcogenides
  • Defects
  • Photoconductivity
  • Time resolved measurements

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Materials Chemistry


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