Abstract
Two discrete defect levels that are distinct from the levels of the standard negative-U model have been located in the a-Se bandgap. One level, situated near the equilibrium Fermi energy level, corresponds to the deep electron trap whose effects on carrier transport have been discussed in the past. It leads to a low-temperature sensitization of the photocurrent. The other defect level is a much more shallow electron trap, some 0.28 eV below the conduction band mobility edge. Its signature is clearly seen in the transient photocurrent after pulsed across-gap excitation.
Original language | English |
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Pages (from-to) | 1543-1546 |
Number of pages | 4 |
Journal | Journal of Non-Crystalline Solids |
Volume | 352 |
Issue number | 9-20 SPEC. ISS. |
DOIs | |
Publication status | Published - Jun 15 2006 |
Keywords
- Amorphous semiconductors
- Chalcogenides
- Defects
- Photoconductivity
- Time resolved measurements
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Materials Chemistry