Effect of As alloying on the valence band tail states in a-Se

Mohammed L. Benkhedir; Fahima Djefaflia; Mohammed Mansour; Naser Qamhieh

doi:10.1002/pssc.200982846

Effect of As alloying on the valence band tail states in a-Se

Mohammed L. Benkhedir, Fahima Djefaflia, Mohammed Mansour, Naser Qamhieh

Department of Physics

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Transient photocurrent (TPC) measurements have been carried out on evaporated a-Se doped with either 0.2% or 0.5% of As and compared with analogous measurements on undoped and Cl doped a-Se. These measurements show that As doping of a-Se suppresses the shallow defects linked to the dihedral angle variations in a-Se chains, and makes the valence band tail states distribution steeper. These changes in the a-Se density of states increase the relative importance of the deep defect levels in As-doped a-Se and thus explain the widely reported hole lifetime shortening with As addition.

Original language	English
Pages (from-to)	877-880
Number of pages	4
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	7
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.200982846
Publication status	Published - 2010
Event	23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23 - Utrecht, Netherlands Duration: Aug 23 2009 → Aug 28 2009

ASJC Scopus subject areas

Condensed Matter Physics

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title = "Effect of As alloying on the valence band tail states in a-Se",

abstract = "Transient photocurrent (TPC) measurements have been carried out on evaporated a-Se doped with either 0.2% or 0.5% of As and compared with analogous measurements on undoped and Cl doped a-Se. These measurements show that As doping of a-Se suppresses the shallow defects linked to the dihedral angle variations in a-Se chains, and makes the valence band tail states distribution steeper. These changes in the a-Se density of states increase the relative importance of the deep defect levels in As-doped a-Se and thus explain the widely reported hole lifetime shortening with As addition.",

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T1 - Effect of As alloying on the valence band tail states in a-Se

AU - Benkhedir, Mohammed L.

AU - Djefaflia, Fahima

AU - Mansour, Mohammed

AU - Qamhieh, Naser

PY - 2010

Y1 - 2010

N2 - Transient photocurrent (TPC) measurements have been carried out on evaporated a-Se doped with either 0.2% or 0.5% of As and compared with analogous measurements on undoped and Cl doped a-Se. These measurements show that As doping of a-Se suppresses the shallow defects linked to the dihedral angle variations in a-Se chains, and makes the valence band tail states distribution steeper. These changes in the a-Se density of states increase the relative importance of the deep defect levels in As-doped a-Se and thus explain the widely reported hole lifetime shortening with As addition.

AB - Transient photocurrent (TPC) measurements have been carried out on evaporated a-Se doped with either 0.2% or 0.5% of As and compared with analogous measurements on undoped and Cl doped a-Se. These measurements show that As doping of a-Se suppresses the shallow defects linked to the dihedral angle variations in a-Se chains, and makes the valence band tail states distribution steeper. These changes in the a-Se density of states increase the relative importance of the deep defect levels in As-doped a-Se and thus explain the widely reported hole lifetime shortening with As addition.

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JO - Physica Status Solidi (C) Current Topics in Solid State Physics

JF - Physica Status Solidi (C) Current Topics in Solid State Physics

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T2 - 23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23

Y2 - 23 August 2009 through 28 August 2009

ER -

Effect of As alloying on the valence band tail states in a-Se

Abstract

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