Effect of As alloying on the valence band tail states in a-Se

Mohammed L. Benkhedir, Fahima Djefaflia, Mohammed Mansour, Naser Qamhieh

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)


Transient photocurrent (TPC) measurements have been carried out on evaporated a-Se doped with either 0.2% or 0.5% of As and compared with analogous measurements on undoped and Cl doped a-Se. These measurements show that As doping of a-Se suppresses the shallow defects linked to the dihedral angle variations in a-Se chains, and makes the valence band tail states distribution steeper. These changes in the a-Se density of states increase the relative importance of the deep defect levels in As-doped a-Se and thus explain the widely reported hole lifetime shortening with As addition.

Original languageEnglish
Pages (from-to)877-880
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number3-4
Publication statusPublished - 2010
Event23rd International Conference on Amorphous and Nanocrystalline Semiconductors, ICANS23 - Utrecht, Netherlands
Duration: Aug 23 2009Aug 28 2009

ASJC Scopus subject areas

  • Condensed Matter Physics


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