TY - JOUR
T1 - Effect of structure and composition on optical properties of Er-Sc silicates prepared from multi-nanolayer films
AU - Najar, A.
AU - Omi, H.
AU - Tawara, T.
N1 - Publisher Copyright:
© 2015 OSA.
PY - 2015/3/23
Y1 - 2015/3/23
N2 - Polycrystalline Er-Sc silicates (ErxSc2-xSiO5 and ErxSc2-xSi2O7) were fabricated using multilayer nanostructured films of Er2O3/SiO2/Sc2O3 deposited on SiO2/Si substrates by RF-sputtering and thermal annealing at high temperature. RBS, TEM, GIXD, and PL results show the presence of ErxSc2-xSiO5 with an emission peak at 1528 nm for annealing from 900 to 1100 °C, and ErxSc2-xSi2O7 with an emission peak at 1537 nm for higher annealing temperature. The PL intensity of the ErxSc2-xSi2O7 phase is five times stronger than that of the ErxSc2-xSiO5 phase at 1250 °C. From PLE and PL spectra of ErxSc2-xSi2O7 thin film, we schematically illustrate the Er3+ Stark energy levels of 4I13/2 to 4I15/2 manifolds due to the crystal field strength effect of Sc3+. Temperature-dependent PL of the ErxSc2-xSi2O7 phase exhibits a variation of the full-width at half-maximum (FWHM) from 1.1 to 2.3 nm. The narrow FWHM is due to the small ionic radii of Sc3+, which enhance the crystal field strength affecting the optical properties of Er3+ ions located at the well-defined lattice sites of Sc silicate. A large excitation cross-section (δex) is equal to 3.0x10-20 cm2 at λex = 1527.6 nm.
AB - Polycrystalline Er-Sc silicates (ErxSc2-xSiO5 and ErxSc2-xSi2O7) were fabricated using multilayer nanostructured films of Er2O3/SiO2/Sc2O3 deposited on SiO2/Si substrates by RF-sputtering and thermal annealing at high temperature. RBS, TEM, GIXD, and PL results show the presence of ErxSc2-xSiO5 with an emission peak at 1528 nm for annealing from 900 to 1100 °C, and ErxSc2-xSi2O7 with an emission peak at 1537 nm for higher annealing temperature. The PL intensity of the ErxSc2-xSi2O7 phase is five times stronger than that of the ErxSc2-xSiO5 phase at 1250 °C. From PLE and PL spectra of ErxSc2-xSi2O7 thin film, we schematically illustrate the Er3+ Stark energy levels of 4I13/2 to 4I15/2 manifolds due to the crystal field strength effect of Sc3+. Temperature-dependent PL of the ErxSc2-xSi2O7 phase exhibits a variation of the full-width at half-maximum (FWHM) from 1.1 to 2.3 nm. The narrow FWHM is due to the small ionic radii of Sc3+, which enhance the crystal field strength affecting the optical properties of Er3+ ions located at the well-defined lattice sites of Sc silicate. A large excitation cross-section (δex) is equal to 3.0x10-20 cm2 at λex = 1527.6 nm.
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U2 - 10.1364/OE.23.007021
DO - 10.1364/OE.23.007021
M3 - Article
AN - SCOPUS:84936875196
SN - 1094-4087
VL - 23
SP - 7021
EP - 7030
JO - Optics Express
JF - Optics Express
IS - 6
ER -