Elaboration of Silicon Nanostructures with Vapor-Phase Silver Assisted Chemical Etching: Correlation between Structural and Optical Properties

Chohdi Amri; Shengzhong Liu; Adel Najar

doi:10.3390/nano13101602

Elaboration of Silicon Nanostructures with Vapor-Phase Silver Assisted Chemical Etching: Correlation between Structural and Optical Properties

Chohdi Amri, Shengzhong Liu, Adel Najar

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

Based on the widely used wet metal-assisted electroless etching, we develop in this work a novel vapor-phase silver-assisted chemical etching (VP-Ag-ACE) suitable for the elaboration of highly doped p-silicon (Si) nanostructures with strong, visible, and multi-peak photoluminescence (PL) emissions. The lateral and vertical etching rates (LER and VER) were discussed based on the etching mechanism of the VP-Ag-ACE. The antireflective suitability of the vapor-etched layer has been evaluated by a reflectivity measurement and exhibits reflectivity values lower than 3%. The PL emission at both room and low temperatures emissions were deeply discussed and correlated with the structural properties of the Si morphologies and their surface states based on the FTIR results.

Original language	English
Article number	1602
Journal	Nanomaterials
Volume	13
Issue number	10
DOIs	https://doi.org/10.3390/nano13101602
Publication status	Published - May 2023

Keywords

oxide layer
photoluminescence
porous silicon
quantum confinement effect
vapor phase-silver assisted chemical etching

ASJC Scopus subject areas

Chemical Engineering(all)
Materials Science(all)

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10.3390/nano13101602

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title = "Elaboration of Silicon Nanostructures with Vapor-Phase Silver Assisted Chemical Etching: Correlation between Structural and Optical Properties",

abstract = "Based on the widely used wet metal-assisted electroless etching, we develop in this work a novel vapor-phase silver-assisted chemical etching (VP-Ag-ACE) suitable for the elaboration of highly doped p-silicon (Si) nanostructures with strong, visible, and multi-peak photoluminescence (PL) emissions. The lateral and vertical etching rates (LER and VER) were discussed based on the etching mechanism of the VP-Ag-ACE. The antireflective suitability of the vapor-etched layer has been evaluated by a reflectivity measurement and exhibits reflectivity values lower than 3%. The PL emission at both room and low temperatures emissions were deeply discussed and correlated with the structural properties of the Si morphologies and their surface states based on the FTIR results.",

keywords = "oxide layer, photoluminescence, porous silicon, quantum confinement effect, vapor phase-silver assisted chemical etching",

author = "Chohdi Amri and Shengzhong Liu and Adel Najar",

note = "Funding Information: We acknowledge the support by UAE University, under project no 31S464. Publisher Copyright: {\textcopyright} 2023 by the authors.",

year = "2023",

month = may,

doi = "10.3390/nano13101602",

language = "English",

volume = "13",

journal = "Nanomaterials",

issn = "2079-4991",

publisher = "Multidisciplinary Digital Publishing Institute (MDPI)",

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T1 - Elaboration of Silicon Nanostructures with Vapor-Phase Silver Assisted Chemical Etching

T2 - Correlation between Structural and Optical Properties

AU - Amri, Chohdi

AU - Liu, Shengzhong

AU - Najar, Adel

PY - 2023/5

Y1 - 2023/5

N2 - Based on the widely used wet metal-assisted electroless etching, we develop in this work a novel vapor-phase silver-assisted chemical etching (VP-Ag-ACE) suitable for the elaboration of highly doped p-silicon (Si) nanostructures with strong, visible, and multi-peak photoluminescence (PL) emissions. The lateral and vertical etching rates (LER and VER) were discussed based on the etching mechanism of the VP-Ag-ACE. The antireflective suitability of the vapor-etched layer has been evaluated by a reflectivity measurement and exhibits reflectivity values lower than 3%. The PL emission at both room and low temperatures emissions were deeply discussed and correlated with the structural properties of the Si morphologies and their surface states based on the FTIR results.

AB - Based on the widely used wet metal-assisted electroless etching, we develop in this work a novel vapor-phase silver-assisted chemical etching (VP-Ag-ACE) suitable for the elaboration of highly doped p-silicon (Si) nanostructures with strong, visible, and multi-peak photoluminescence (PL) emissions. The lateral and vertical etching rates (LER and VER) were discussed based on the etching mechanism of the VP-Ag-ACE. The antireflective suitability of the vapor-etched layer has been evaluated by a reflectivity measurement and exhibits reflectivity values lower than 3%. The PL emission at both room and low temperatures emissions were deeply discussed and correlated with the structural properties of the Si morphologies and their surface states based on the FTIR results.

KW - oxide layer

KW - photoluminescence

KW - porous silicon

KW - quantum confinement effect

KW - vapor phase-silver assisted chemical etching

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DO - 10.3390/nano13101602

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Elaboration of Silicon Nanostructures with Vapor-Phase Silver Assisted Chemical Etching: Correlation between Structural and Optical Properties

Abstract

Keywords

ASJC Scopus subject areas

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