Electrical and optical characterization of tellurium free phase-change material

Saleh T. Mahmoud; N. Qamhieh; A. I. Ayesh; H. Ghamlouche; M. El-Shaer

Electrical and optical characterization of tellurium free phase-change material

Saleh T. Mahmoud, N. Qamhieh, A. I. Ayesh, H. Ghamlouche, M. El-Shaer

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this work we investigate the electrical and optical properties of Ge15Sb85 thin films prepared by a DC sputtering technique. The phase transition of Te-free films was studied using resistance-temperature measurements. The structure and stoichiometery of the films were identified by X-Ray Diffraction (XRD), and Energy Dispersive X-ray analysis (EDX). The electrical properties of Ge ₁₅Sb ₈₅ films have been investigated using AC conductivity (Impedance spectroscopy). The resistance-temperature measurements reveal that the amorphous-crystalline transition temperature of Ge ₁₅Sb ₈₅ is around T _C = 420 K. The optical energy gap of Ge ₁₅Sb ₈₅ films has been measured using UV-VIS-IR spectrophotometer. The estimated activation energy and optical gap allocate the Fermi energy level in high density valence band tail states.

Original language	English
Pages (from-to)	1498-1501
Number of pages	4
Journal	Journal of Optoelectronics and Advanced Materials
Volume	13
Issue number	11-12
Publication status	Published - Nov 2011

Keywords

Chalcogenides
Impedance spectroscopy
Nonvolatile Memories
Phase change materials

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

@article{7f567f2f86464c35b2449f2a2643d78c,

title = "Electrical and optical characterization of tellurium free phase-change material",

abstract = "In this work we investigate the electrical and optical properties of Ge15Sb85 thin films prepared by a DC sputtering technique. The phase transition of Te-free films was studied using resistance-temperature measurements. The structure and stoichiometery of the films were identified by X-Ray Diffraction (XRD), and Energy Dispersive X-ray analysis (EDX). The electrical properties of Ge 15Sb 85 films have been investigated using AC conductivity (Impedance spectroscopy). The resistance-temperature measurements reveal that the amorphous-crystalline transition temperature of Ge 15Sb 85 is around T C = 420 K. The optical energy gap of Ge 15Sb 85 films has been measured using UV-VIS-IR spectrophotometer. The estimated activation energy and optical gap allocate the Fermi energy level in high density valence band tail states.",

keywords = "Chalcogenides, Impedance spectroscopy, Nonvolatile Memories, Phase change materials",

author = "Mahmoud, {Saleh T.} and N. Qamhieh and Ayesh, {A. I.} and H. Ghamlouche and M. El-Shaer",

year = "2011",

month = nov,

language = "English",

volume = "13",

pages = "1498--1501",

journal = "Journal of Optoelectronics and Advanced Materials",

issn = "1454-4164",

publisher = "National Institute of Optoelectronics",

number = "11-12",

}

TY - JOUR

T1 - Electrical and optical characterization of tellurium free phase-change material

AU - Mahmoud, Saleh T.

AU - Qamhieh, N.

AU - Ayesh, A. I.

AU - Ghamlouche, H.

AU - El-Shaer, M.

PY - 2011/11

Y1 - 2011/11

N2 - In this work we investigate the electrical and optical properties of Ge15Sb85 thin films prepared by a DC sputtering technique. The phase transition of Te-free films was studied using resistance-temperature measurements. The structure and stoichiometery of the films were identified by X-Ray Diffraction (XRD), and Energy Dispersive X-ray analysis (EDX). The electrical properties of Ge 15Sb 85 films have been investigated using AC conductivity (Impedance spectroscopy). The resistance-temperature measurements reveal that the amorphous-crystalline transition temperature of Ge 15Sb 85 is around T C = 420 K. The optical energy gap of Ge 15Sb 85 films has been measured using UV-VIS-IR spectrophotometer. The estimated activation energy and optical gap allocate the Fermi energy level in high density valence band tail states.

AB - In this work we investigate the electrical and optical properties of Ge15Sb85 thin films prepared by a DC sputtering technique. The phase transition of Te-free films was studied using resistance-temperature measurements. The structure and stoichiometery of the films were identified by X-Ray Diffraction (XRD), and Energy Dispersive X-ray analysis (EDX). The electrical properties of Ge 15Sb 85 films have been investigated using AC conductivity (Impedance spectroscopy). The resistance-temperature measurements reveal that the amorphous-crystalline transition temperature of Ge 15Sb 85 is around T C = 420 K. The optical energy gap of Ge 15Sb 85 films has been measured using UV-VIS-IR spectrophotometer. The estimated activation energy and optical gap allocate the Fermi energy level in high density valence band tail states.

KW - Chalcogenides

KW - Impedance spectroscopy

KW - Nonvolatile Memories

KW - Phase change materials

UR - http://www.scopus.com/inward/record.url?scp=84855506350&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84855506350&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:84855506350

SN - 1454-4164

VL - 13

SP - 1498

EP - 1501

JO - Journal of Optoelectronics and Advanced Materials

JF - Journal of Optoelectronics and Advanced Materials

IS - 11-12

ER -

Electrical and optical characterization of tellurium free phase-change material

Abstract

Keywords

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this