Electrical and optical characterization of tellurium free phase-change material

Saleh T. Mahmoud, N. Qamhieh, A. I. Ayesh, H. Ghamlouche, M. El-Shaer

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


In this work we investigate the electrical and optical properties of Ge15Sb85 thin films prepared by a DC sputtering technique. The phase transition of Te-free films was studied using resistance-temperature measurements. The structure and stoichiometery of the films were identified by X-Ray Diffraction (XRD), and Energy Dispersive X-ray analysis (EDX). The electrical properties of Ge 15Sb 85 films have been investigated using AC conductivity (Impedance spectroscopy). The resistance-temperature measurements reveal that the amorphous-crystalline transition temperature of Ge 15Sb 85 is around T C = 420 K. The optical energy gap of Ge 15Sb 85 films has been measured using UV-VIS-IR spectrophotometer. The estimated activation energy and optical gap allocate the Fermi energy level in high density valence band tail states.

Original languageEnglish
Pages (from-to)1498-1501
Number of pages4
JournalJournal of Optoelectronics and Advanced Materials
Issue number11-12
Publication statusPublished - Nov 2011


  • Chalcogenides
  • Impedance spectroscopy
  • Nonvolatile Memories
  • Phase change materials

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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