Electrical conductivity measurements in Ge2Sb2Te 5 films

N. Qamhieh, H. Ghamlouche, S. T. Mahmoud, H. Al-Shamisi, S. Ahmad

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Thin films of Ge2Sb2Te5 were prepared using thermal evaporation technique. The amorphous structure and stoichiometery of the films were identified by X-ray diffraction and Energy Dispersive X-ray analysis, EDX. The conductivity measurements were carried out using DC I-V curves and AC Impedance spectroscopy techniques. The measured activation energy (Ev) is found to be about 0.36-0.39 eV, respectively, which is approximately half the energy gap (Eg= 0.72-0.78 eV). The amorphous-crystalline transition temperature (Tc) of the films was also estimated to be 135°C. The results can be reserved as an evidence for the chalcogenide nature defects in Ge2Sb2Te5 films.

Original languageEnglish
Pages (from-to)3157-3160
Number of pages4
JournalJournal of Optoelectronics and Advanced Materials
Issue number10
Publication statusPublished - Oct 2007


  • Activation energy
  • Chalcogenides
  • Conductivity
  • Impedance spectroscopy
  • Phase change materials
  • Relaxation frequency

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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