Electrical properties of plasma-enhanced chemical vapor deposited germanium selenide films

N. Qamhieh, G. J. Adriaenssens

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


A study of electrical properties of PECVD a-Ge-Se films has been conducted. Steady-state conductivity measurements show that PECVD samples are different from thermally evaporated (TE) layers. The conductivity in the former is thermally activated with much lower activation energy Eσ, never above 0.7 eV. Moreover, the data do not fit with Meyer-Neldel relation which is universally observed in amorphous semiconductors. PECVD of Ge-Se films may provide a way of changing their electrical properties, while essentially preserving the optical ones with respect to TE films. The presence of hydrogen could be responsible for these changes.

Original languageEnglish
Pages (from-to)1785-1791
Number of pages7
JournalJournal of Optoelectronics and Advanced Materials
Issue number4
Publication statusPublished - Aug 2005


  • Electrical properties
  • Germanium selenide
  • Plasma-enhanced chemical vapour deposition

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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