Electrical properties of Se₂Sb₂Te₆ thin films

The electrical properties of Se₂Sb₂Te₆ thin films are investigated using dc resistance, impedance spectroscopy and capacitance-voltage (C-V) measurements. The amorphous-crystalline transition temperature, T_c, is estimated to be 60 °C using dc resistance measurements. The impedance spectroscopy measurements are performed at different temperatures ranging from 25 to 95 °C. The impedance spectroscopy data give an estimation of the activation energy, E_v = 0.5 eV. The amorphous-crystalline interface is electrically characterized by measuring the capacitance of the film as a function of bias voltage at different temperatures ranging from 25 to 85 °C. The C-V measurements show temperature dependence and nonlinear behaviour of the capacitance with the applied bias voltages that could be attributed to the crystallization growth as the temperature gets close to T_c.