Abstract
A tight binding formalism within virtual crystal approximation in which, the effects of composition disorder and bonds relaxation are involved, is applied to the quaternary system ZnyCd1-ySexTe1-x so as to compute its energy band gap and predict the ionic character. A new model, calculating the relaxation of bonds for the quaternary alloys is presented. The electronic parameters of the quaternary alloy considered are calculated as function of x composition. Very good agreement is obtained between the available experimental data and our results.
Original language | English |
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Pages (from-to) | 305-309 |
Number of pages | 5 |
Journal | Journal of Alloys and Compounds |
Volume | 465 |
Issue number | 1-2 |
DOIs | |
Publication status | Published - Oct 6 2008 |
Externally published | Yes |
Keywords
- Quaternary semiconductor
- Tight binding method
- VCA
ASJC Scopus subject areas
- Mechanics of Materials
- Mechanical Engineering
- Metals and Alloys
- Materials Chemistry