Electronic band structure of quaternary alloy ZnyCd1-ySexTe1-x

K. Benkabou; N. Amrane; M. Maachou

doi:10.1016/j.jallcom.2007.10.085

Electronic band structure of quaternary alloy Zn_yCd_1-ySe_xTe_1-x

K. Benkabou
, N. Amrane
, M. Maachou

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

A tight binding formalism within virtual crystal approximation in which, the effects of composition disorder and bonds relaxation are involved, is applied to the quaternary system Zn_yCd_1-ySe_xTe_1-x so as to compute its energy band gap and predict the ionic character. A new model, calculating the relaxation of bonds for the quaternary alloys is presented. The electronic parameters of the quaternary alloy considered are calculated as function of x composition. Very good agreement is obtained between the available experimental data and our results.

Original language	English
Pages (from-to)	305-309
Number of pages	5
Journal	Journal of Alloys and Compounds
Volume	465
Issue number	1-2
DOIs	https://doi.org/10.1016/j.jallcom.2007.10.085
Publication status	Published - Oct 6 2008
Externally published	Yes

Keywords

Quaternary semiconductor
Tight binding method
VCA

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.jallcom.2007.10.085

Cite this

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abstract = "A tight binding formalism within virtual crystal approximation in which, the effects of composition disorder and bonds relaxation are involved, is applied to the quaternary system ZnyCd1-ySexTe1-x so as to compute its energy band gap and predict the ionic character. A new model, calculating the relaxation of bonds for the quaternary alloys is presented. The electronic parameters of the quaternary alloy considered are calculated as function of x composition. Very good agreement is obtained between the available experimental data and our results.",

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AU - Benkabou, K.

AU - Amrane, N.

AU - Maachou, M.

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N2 - A tight binding formalism within virtual crystal approximation in which, the effects of composition disorder and bonds relaxation are involved, is applied to the quaternary system ZnyCd1-ySexTe1-x so as to compute its energy band gap and predict the ionic character. A new model, calculating the relaxation of bonds for the quaternary alloys is presented. The electronic parameters of the quaternary alloy considered are calculated as function of x composition. Very good agreement is obtained between the available experimental data and our results.

AB - A tight binding formalism within virtual crystal approximation in which, the effects of composition disorder and bonds relaxation are involved, is applied to the quaternary system ZnyCd1-ySexTe1-x so as to compute its energy band gap and predict the ionic character. A new model, calculating the relaxation of bonds for the quaternary alloys is presented. The electronic parameters of the quaternary alloy considered are calculated as function of x composition. Very good agreement is obtained between the available experimental data and our results.

KW - Quaternary semiconductor

KW - Tight binding method

KW - VCA

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