Abstract
We present tight-binding band-structure calculations for InNxAs1 - x alloys as a function of the nitrogen concentration. The high-concentration regime is found to be extremely sensitive to x. The low-concentration region (0 < x < 0.25) is of technological interest and is examined in detail. Effects of clustering, percolation, and the dependence of the energy gap on the assumed valence-band offsets on the band gap are reported.
Original language | English |
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Pages (from-to) | 3576-3578 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 76 |
Issue number | 24 |
DOIs | |
Publication status | Published - Jun 12 2000 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)