Electronic structure of InNxAs1 - x alloys from tight-binding calculations

Tit Nacir; M. W.C. Dharma-Wardana

doi:10.1063/1.126711

Electronic structure of InN_xAs_{1 - x} alloys from tight-binding calculations

Tit Nacir, M. W.C. Dharma-Wardana

Department of Physics

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

We present tight-binding band-structure calculations for InN_xAs_{1 - x} alloys as a function of the nitrogen concentration. The high-concentration regime is found to be extremely sensitive to x. The low-concentration region (0 < x < 0.25) is of technological interest and is examined in detail. Effects of clustering, percolation, and the dependence of the energy gap on the assumed valence-band offsets on the band gap are reported.

Original language	English
Pages (from-to)	3576-3578
Number of pages	3
Journal	Applied Physics Letters
Volume	76
Issue number	24
DOIs	https://doi.org/10.1063/1.126711
Publication status	Published - Jun 12 2000

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.126711

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Electronic structure of InN_xAs_{1 - x} alloys from tight-binding calculations

Abstract

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