We present tight-binding band-structure calculations for InNxAs1 - x alloys as a function of the nitrogen concentration. The high-concentration regime is found to be extremely sensitive to x. The low-concentration region (0 < x < 0.25) is of technological interest and is examined in detail. Effects of clustering, percolation, and the dependence of the energy gap on the assumed valence-band offsets on the band gap are reported.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - Jun 12 2000|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)