Electronic structure of InNxAs1 - x alloys from tight-binding calculations

Tit Nacir, M. W.C. Dharma-Wardana

Research output: Contribution to journalArticlepeer-review

28 Citations (Scopus)


We present tight-binding band-structure calculations for InNxAs1 - x alloys as a function of the nitrogen concentration. The high-concentration regime is found to be extremely sensitive to x. The low-concentration region (0 < x < 0.25) is of technological interest and is examined in detail. Effects of clustering, percolation, and the dependence of the energy gap on the assumed valence-band offsets on the band gap are reported.

Original languageEnglish
Pages (from-to)3576-3578
Number of pages3
JournalApplied Physics Letters
Issue number24
Publication statusPublished - Jun 12 2000

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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