Electronic structure of pseudobinary semiconductor alloys InxGa1-x and InAsxSb1-x

N. Bouarissa, N. Amrane, H. Aourag

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


A method calculating detailed electronic properties of the anionic and cationic pseudobinary InxGa1-xSb and InAsxSb1-x semiconductor alloys is presented. The technique begins with realistic band structures obtained for the constituent compounds by fitting the band-gap symmetry-point energies to experimental data within the pseudopotential scheme. Then the virtual crystal approximation which incorporates compositional disordered as an effective potential is used to calculate the alloys band structures and charge densities. Detailed comparison between the theoretical predictions and experimental data demonstrate the quantitative nature of the method. Bowing parameters for the Ω, X, and L gaps are in good agreement with the experimental results.

Original languageEnglish
Pages (from-to)755-761
Number of pages7
JournalInfrared Physics and Technology
Issue number4
Publication statusPublished - Jun 1995
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics


Dive into the research topics of 'Electronic structure of pseudobinary semiconductor alloys InxGa1-x and InAsxSb1-x'. Together they form a unique fingerprint.

Cite this