Electronic structure of the pseudobinary semiconductor alloy GaxAl1 - xSb

F. Driss-Khodja, H. Abid, B. Khelifa, N. Amrane, B. Soudini, M. Driz, N. Badi, H. Aourag

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

A method for calculating the detailed electronic properties of the pseudobinary semiconductor alloy GaxAl1-xSb os presented. The technique begins with realistic band structures obtained for the constituent compounds by fitting the band gap symmetry point energies to experimental data within the pseudopotential scheme. Then the virtual crystal approximation, which incorporates compositional disorder as an effective potential, is used to calculate the alloy band structures and charge densities. A detailed comparison between the theoretical predictions and experimental data demonstrates the quantitative nature of the method. The bowing parameters for the Λ, X and L gaps and the direct-to-indirect band gap cross-over concentrations are in good agreement with the experimental results.

Original languageEnglish
Pages (from-to)93-97
Number of pages5
JournalMaterials Science and Engineering B
Volume27
Issue number2-3
DOIs
Publication statusPublished - Nov 1994
Externally publishedYes

Keywords

  • Alloys
  • Electron states
  • Pseudopotentials
  • Semiconductors

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint

Dive into the research topics of 'Electronic structure of the pseudobinary semiconductor alloy GaxAl1 - xSb'. Together they form a unique fingerprint.

Cite this