Abstract
This paper reviews recent advances in emission of terahertz radiation from two-dimensional (2D) electron systems in semiconductor nano-heterostructures. 2D plasmon resonance is first presented to demonstrate intense broadband terahertz emission from InGaP/InGaAs/GaAs and InAlAs/InGaAs/InP material systems. The device structure is based on a high-electron mobility transistor and incorporates the author's original interdigitated dual-grating gates. Second topic focuses on graphene, a monolayer carbon-atomic honeycomb lattice crystal, exhibiting unique carrier transport and optical properties owing to massless and gapless energy spectrum. Coherent stimulated terahertz emission from femtosecond infrared-laser pumped epitaxial graphene is experimentally observed, reflecting the occurrence of negative dynamic conductivity and population inversion.
Original language | English |
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Pages (from-to) | 629-645 |
Number of pages | 17 |
Journal | Journal of Infrared, Millimeter, and Terahertz Waves |
Volume | 32 |
Issue number | 5 |
DOIs | |
Publication status | Published - May 2011 |
Externally published | Yes |
Keywords
- Graphene
- Heterostructures
- Plasmons
- Terahertz emission
- Two-dimensional electrons
ASJC Scopus subject areas
- Radiation
- Instrumentation
- Condensed Matter Physics
- Electrical and Electronic Engineering