Evidence for narrow mid-gap defect band in amorphous selenium from low-temperature anomalous electrical properties

Sunil Thomas; Naser Qamhieh; Saleh T. Mahmoud; Guy J. Adriaenssens

doi:10.1016/j.physb.2020.412139

Evidence for narrow mid-gap defect band in amorphous selenium from low-temperature anomalous electrical properties

Sunil Thomas, Naser Qamhieh, Saleh T. Mahmoud, Guy J. Adriaenssens

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Electrical properties of amorphous selenium films (~2.1 μm thick) were investigated at different temperatures between 225 K and room temperature. The samples were prepared using thermal evaporation method. The capacitance and conductance were measured and analyzed to study their changes with temperature and voltage. An anomalous peak is found in the conductance- and capacitance-temperature curves at ~245 K. The phenomenon can be linked to the distribution of defect states near the mid-gap and the change in ‘effective transport energy’ at which the transport takes place.

Original language	English
Article number	412139
Journal	Physica B: Condensed Matter
Volume	586
DOIs	https://doi.org/10.1016/j.physb.2020.412139
Publication status	Published - Jun 1 2020

Keywords

Capacitance
Conductance
Deep defects
Electrical properties
Selenium

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1016/j.physb.2020.412139

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@article{4b6d2eb4081e41519577b58cb1806b3c,

title = "Evidence for narrow mid-gap defect band in amorphous selenium from low-temperature anomalous electrical properties",

abstract = "Electrical properties of amorphous selenium films (~2.1 μm thick) were investigated at different temperatures between 225 K and room temperature. The samples were prepared using thermal evaporation method. The capacitance and conductance were measured and analyzed to study their changes with temperature and voltage. An anomalous peak is found in the conductance- and capacitance-temperature curves at ~245 K. The phenomenon can be linked to the distribution of defect states near the mid-gap and the change in {\textquoteleft}effective transport energy{\textquoteright} at which the transport takes place.",

keywords = "Capacitance, Conductance, Deep defects, Electrical properties, Selenium",

author = "Sunil Thomas and Naser Qamhieh and Mahmoud, {Saleh T.} and Adriaenssens, {Guy J.}",

note = "Funding Information: The authors acknowledge the research project No. 31S313 funded by the United Arab Emirates University Program for Advanced Research (UPAR). Publisher Copyright: {\textcopyright} 2020 Elsevier B.V.",

year = "2020",

month = jun,

day = "1",

doi = "10.1016/j.physb.2020.412139",

language = "English",

volume = "586",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

}

TY - JOUR

T1 - Evidence for narrow mid-gap defect band in amorphous selenium from low-temperature anomalous electrical properties

AU - Thomas, Sunil

AU - Qamhieh, Naser

AU - Mahmoud, Saleh T.

AU - Adriaenssens, Guy J.

N1 - Funding Information: The authors acknowledge the research project No. 31S313 funded by the United Arab Emirates University Program for Advanced Research (UPAR). Publisher Copyright: © 2020 Elsevier B.V.

PY - 2020/6/1

Y1 - 2020/6/1

N2 - Electrical properties of amorphous selenium films (~2.1 μm thick) were investigated at different temperatures between 225 K and room temperature. The samples were prepared using thermal evaporation method. The capacitance and conductance were measured and analyzed to study their changes with temperature and voltage. An anomalous peak is found in the conductance- and capacitance-temperature curves at ~245 K. The phenomenon can be linked to the distribution of defect states near the mid-gap and the change in ‘effective transport energy’ at which the transport takes place.

AB - Electrical properties of amorphous selenium films (~2.1 μm thick) were investigated at different temperatures between 225 K and room temperature. The samples were prepared using thermal evaporation method. The capacitance and conductance were measured and analyzed to study their changes with temperature and voltage. An anomalous peak is found in the conductance- and capacitance-temperature curves at ~245 K. The phenomenon can be linked to the distribution of defect states near the mid-gap and the change in ‘effective transport energy’ at which the transport takes place.

KW - Capacitance

KW - Conductance

KW - Deep defects

KW - Electrical properties

KW - Selenium

UR - http://www.scopus.com/inward/record.url?scp=85081672025&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85081672025&partnerID=8YFLogxK

U2 - 10.1016/j.physb.2020.412139

DO - 10.1016/j.physb.2020.412139

M3 - Article

AN - SCOPUS:85081672025

SN - 0921-4526

VL - 586

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

M1 - 412139

ER -

Evidence for narrow mid-gap defect band in amorphous selenium from low-temperature anomalous electrical properties

Abstract

Keywords

ASJC Scopus subject areas

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