Evolution and Analysis of GaN GAA FET Induced High-K Spacer Wrapped Gate Underlap for Superfast Circuitry and RF Applications

Engineering

• Field Effect Transistor 100%
• Nitride 100%
• Engineering 40%
• Nodes 20%
• Performance Parameter 20%
• Energy Efficiency 20%
• Energy Dissipation 20%
• Reducing Power 20%
• Promising Candidate 20%
• Switching Speed 20%
• Parasitic Capacitance 20%
• Cutoff Frequency 20%
• Control Gate 20%
• Parasitic Resistance 20%
• Band Gap 20%

Keyphrases

• Superfast 100%
• Subthreshold Swing 40%
• Drain Induced Barrier Lowering 40%
• Drainage Engineering 20%
• Electrostatic Control 20%
• Spacer Engineering 20%
• Fringing Field Effect 20%
• Spacer Technology 20%
• Underlap Region 20%

Material Science

• Field Effect Transistor 100%
• Gallium Nitride 100%
• Capacitance 20%
• Transistor 20%
• Electron Mobility 20%
• Novel Device 20%