Excitation mechanisms and localization sites of erbium-doped porous silicon

A. Najar, H. Elhouichet, N. Lorrain, M. Oueslati

Research output: Contribution to journalArticlepeer-review

18 Citations (Scopus)


Porous silicon (PS) is doped with erbium by electrochemical anodisation. The penetration of erbium into the PS layer is confirmed by Rutherford backscattering spectroscopy (RBS) and energy dispersive X-ray (EDX) measurements. Efficient green and infrared emissions were observed at room temperature. The investigations are focused on the evolutions versus temperature and pump intensity of the green photoluminescence (PL) corresponding to the 4 S 3/2 4 I 15/2 transition. It was found that an erbium related level defect can be involved on the excitation and emission processes of erbium. Pump intensity dependent PL studies revealed that for the electrochemical incorporation, most of the Er 3+ ions are localized inside the Si nanocrystallites and not in stoichiometric SiO 2 . The optical cross-section is close to that of erbium in Si nanocrystallites.

Original languageEnglish
Pages (from-to)5808-5813
Number of pages6
JournalApplied Surface Science
Issue number16
Publication statusPublished - Jun 15 2006
Externally publishedYes


  • Cross-section
  • Erbium
  • Excitation mechanisms
  • Porous silicon

ASJC Scopus subject areas

  • General Chemistry
  • Condensed Matter Physics
  • General Physics and Astronomy
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films


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